SI1553DL-T1-GE3
- Mfr.Part #
- SI1553DL-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V SC70-6
- Stock
- 91
- In Stock :
- 91
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Series :
- TrenchFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- PURE MATTE TIN
- Pin Count :
- 6
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 660mA 410mA
- Max Power Dissipation :
- 270mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 410mA
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 660mA, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.2nC @ 4.5V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.385Ohm
- Number of Elements :
- 2
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Base Part Number :
- SI1553
- Power Dissipation :
- 270mW
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N and P-Channel
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Element Configuration :
- Dual
- Drain to Source Voltage (Vdss) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 600mV
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Published :
- 2010
- Datasheets
- SI1553DL-T1-GE3
SI1553DL-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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| SI1539DDL-T1-GE3 | Vishay | 40,194 | MOSFET N/P-CH 30V SC70-6 |
| SI1539DL-T1-E3 | Vishay | 4,991 | MOSFET N/P-CH 30V SC70-6 |
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