SI1555DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

270mW

Published :

2009

Max Power Dissipation :

270mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

FET Feature :

Logic Level Gate

Threshold Voltage :

600mV

Lead Free :

Lead Free

Turn-Off Delay Time :

10 ns

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

FET Type :

N and P-Channel

Resistance :

600mOhm

Height :

990.6μm

Continuous Drain Current (ID) :

660mA

Supplier Device Package :

SC-70-6 (SOT-363)

Nominal Vgs :

600 mV

Drain to Source Voltage (Vdss) :

20V 8V

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Base Part Number :

SI1555

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

385mOhm @ 660mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

660mA 570mA

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Element Configuration :

Single

Mount :

Surface Mount

Length :

2.1844mm

Rise Time :

25ns

Width :

1.3462mm

Drain to Source Breakdown Voltage :

-8V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Power - Max :

270mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

385 mΩ

Drain to Source Resistance :

600mOhm

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No