SI1555DL-T1-E3
- Mfr.Part #
- SI1555DL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V/8V SC70-6
- Stock
- 1,896
- In Stock :
- 1,896
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Width :
- 1.3462mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- SC-70-6 (SOT-363)
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 600 mV
- Continuous Drain Current (ID) :
- 660mA
- Rds On (Max) @ Id, Vgs :
- 385mOhm @ 660mA, 4.5V
- Number of Elements :
- 2
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Published :
- 2009
- Fall Time (Typ) :
- 25 ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 270mW
- FET Feature :
- Logic Level Gate
- Drain to Source Resistance :
- 600mOhm
- Gate to Source Voltage (Vgs) :
- 8V
- Power - Max :
- 270mW
- Mount :
- Surface Mount
- Base Part Number :
- SI1555
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Threshold Voltage :
- 600mV
- Length :
- 2.1844mm
- FET Type :
- N and P-Channel
- Drain to Source Voltage (Vdss) :
- 20V 8V
- Rds On Max :
- 385 mΩ
- Resistance :
- 600mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.2nC @ 4.5V
- Turn-Off Delay Time :
- 10 ns
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 270mW
- Min Operating Temperature :
- -55°C
- Height :
- 990.6μm
- Drain to Source Breakdown Voltage :
- -8V
- Number of Pins :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 660mA 570mA
- Max Operating Temperature :
- 150°C
- Rise Time :
- 25ns
- Lead Free :
- Lead Free
- Datasheets
- SI1555DL-T1-E3
SI1555DL-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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