SI1551DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

1.5V

Terminal Finish :

MATTE TIN

Turn On Delay Time :

23 ns

Max Power Dissipation :

270mW

Termination :

SMD/SMT

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.41A

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Dual Supply Voltage :

20V

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Power Dissipation :

270mW

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI1551

JESD-609 Code :

e3

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

8.5 ns

Series :

TrenchFET®

Published :

2007

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 290mA, 4.5V

Pbfree Code :

yes

Number of Terminations :

6

REACH SVHC :

No SVHC

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

300mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.3462mm

Fall Time (Typ) :

20 ns

Length :

2.1844mm

Number of Pins :

6

Transistor Element Material :

SILICON

Height :

990.6μm

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

290mA 410mA

Pin Count :

6

Resistance :

1.9Ohm

Nominal Vgs :

1.5 V

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Feature :

Logic Level Gate