SI1539DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Weight :

7.512624mg

Drain-source On Resistance-Max :

0.48Ohm

Series :

TrenchFET®

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Base Part Number :

SI1539

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

480m Ω @ 590mA, 10V

Power Dissipation :

270mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

0.54A

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

540mA 420mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

Radiation Hardening :

No

Pbfree Code :

yes

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Drain Current (ID) :

420mA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Max Power Dissipation :

270mW

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

PURE MATTE TIN

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

Number of Elements :

2

Published :

2016

Pin Count :

6

Lead Free :

Lead Free