SI1563DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

REACH SVHC :

Unknown

Termination :

SMD/SMT

Number of Terminations :

6

ECCN Code :

EAR99

Max Power Dissipation :

570mW

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Resistance :

490mOhm

Threshold Voltage :

450mV

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

740mW

Nominal Vgs :

1 V

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Published :

2014

Fall Time (Typ) :

25 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

1.13A 880mA

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.13A

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rise Time :

25ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn-Off Delay Time :

15 ns

Number of Elements :

2

Dual Supply Voltage :

20V

Terminal Finish :

PURE MATTE TIN

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Mount :

Surface Mount

Base Part Number :

SI1563

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 100µA