SI1557DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

470mW

ECCN Code :

EAR99

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

10 ns

Published :

2014

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

1.2A

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

1V @ 100µA

Max Power Dissipation :

470mW

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.2A 770mA

Radiation Hardening :

No

Rise Time :

30ns

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Number of Elements :

2

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

235m Ω @ 1.2A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Drain to Source Breakdown Voltage :

12V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)