SI1557DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

470mW

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

470mW

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1.2A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Rise Time :

30ns

Published :

2014

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 100µA

Gate to Source Voltage (Vgs) :

8V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

12V

Mount :

Surface Mount

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

1.2A 770mA

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

235m Ω @ 1.2A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

15 ns

Number of Elements :

2