NTE2634

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA, 10V

Frequency - Transition :

1.2GHz

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Power - Max :

3W

Gain :

-

JEDEC-95 Code :

TO-126

Voltage - Collector Emitter Breakdown (Max) :

95V

Transistor Application :

AMPLIFIER

Manufacturer :

NTE Electronics

Current - Collector (Ic) (Max) :

300mA

Collector-Emitter Voltage-Max :

95 V

Qualification Status :

Not Qualified

Surface Mount :

No

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-126

Operating Temperature :

175°C (TJ)

Number of Elements :

1

Terminal Position :

Single

Series :

-

DC Current Gain-Min (hFE) :

20

Number of Terminals :

3

Power Dissipation-Max (Abs) :

3 W

Polarity/Channel Type :

PNP

Package / Case :

TO-225AA, TO-126-3

Collector Current-Max (IC) :

0.3 A

Subcategory :

Other Transistors

Configuration :

Single

Collector-Base Capacitance-Max :

2 pF

JESD-30 Code :

R-PSFM-T3

Package :

Bag

Transistor Type :

PNP

Reach Compliance Code :

Unknown

Noise Figure (dB Typ @ f) :

-

ECCN Code :

EAR99

Mounting Type :

Through Hole

Highest Frequency Band :

HIGH FREQUENCY BAND