MJD340T4G
- Mfr.Part #
- MJD340T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A DPAK
- Stock
- 235
- In Stock :
- 235
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.22mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- hFE Min :
- 30
- Published :
- 2005
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.38mm
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 hours ago)
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 1.56W
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Max Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Emitter Base Voltage (VEBO) :
- 3V
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Frequency - Transition :
- 10MHz
- Current Rating :
- 500mA
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Length :
- 6.73mm
- Power Dissipation :
- 1.56W
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Base Part Number :
- MJD340
- Transistor Element Material :
- SILICON
- Datasheets
- MJD340T4G

NPN -65°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD340T4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Emitter base voltages of 3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MJD340T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340T4G Applications
There are a lot of ON Semiconductor
MJD340T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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