MJD31CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

1.2V

hFE Min :

25

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

100V

Height :

2.3876mm

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Voltage - Rated DC :

100V

Terminal Form :

Gull wing

Gain Bandwidth Product :

3MHz

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Published :

2005

Collector Emitter Voltage (VCEO) :

100V

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Current Rating :

3A

Transistor Element Material :

SILICON

Base Part Number :

MJD31

Packaging :

Tube

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN

Factory Lead Time :

8 Weeks

Frequency :

3MHz

Max Collector Current :

3A

Surface Mount :

yes

Number of Pins :

3

Current - Collector Cutoff (Max) :

50μA

Width :

6.223mm

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Length :

6.7056mm

Number of Terminations :

2

Number of Elements :

1

Transition Frequency :

3MHz

Max Power Dissipation :

1.56W

Radiation Hardening :

No

Power Dissipation :

1.56W

REACH SVHC :

No SVHC

Pbfree Code :

yes

Transistor Type :

NPN

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

100V

Case Connection :

COLLECTOR