MJD31CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

100V

Base Part Number :

MJD31

Width :

6.223mm

Transistor Type :

NPN

Contact Plating :

Tin

Power Dissipation :

1.56W

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current :

3A

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Published :

2005

Number of Pins :

3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.2V

Pin Count :

3

Height :

2.3876mm

Collector Emitter Voltage (VCEO) :

100V

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Frequency :

3MHz

Mounting Type :

Surface Mount

Length :

6.7056mm

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Surface Mount :

yes

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

50μA

Collector Emitter Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Current Rating :

3A

Number of Elements :

1

Transition Frequency :

3MHz

Operating Temperature :

-65°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.56W

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Case Connection :

COLLECTOR

Transistor Application :

AMPLIFIER

hFE Min :

25

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Packaging :

Tube

Gain Bandwidth Product :

3MHz