MJD31CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

50μA

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Element Configuration :

Single

Number of Pins :

3

Case Connection :

COLLECTOR

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Collector Emitter Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power Dissipation :

1.56W

Transition Frequency :

3MHz

Width :

6.223mm

Collector Base Voltage (VCBO) :

100V

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Voltage - Rated DC :

100V

Collector Emitter Voltage (VCEO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Length :

6.7056mm

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gain Bandwidth Product :

3MHz

Base Part Number :

MJD31

hFE Min :

25

Max Power Dissipation :

1.56W

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1.2V

Polarity/Channel Type :

NPN

Max Collector Current :

3A

Published :

2005

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Height :

2.3876mm

RoHS Status :

ROHS3 Compliant

Current Rating :

3A

Frequency :

3MHz

Number of Elements :

1

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ