MJD31CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MJD31

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Max Power Dissipation :

1.56W

Published :

2005

Surface Mount :

yes

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

1.2V

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Height :

2.3876mm

Transition Frequency :

3MHz

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

100V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Frequency :

3MHz

REACH SVHC :

No SVHC

Transistor Type :

NPN

hFE Min :

25

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Pin Count :

3

Number of Elements :

1

Case Connection :

COLLECTOR

Power Dissipation :

1.56W

Max Collector Current :

3A

Polarity/Channel Type :

NPN

Length :

6.7056mm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

100V

Gain Bandwidth Product :

3MHz

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

50μA

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.223mm

Current Rating :

3A

Transistor Element Material :

SILICON

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260