MJD31C1G
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- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock ：
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Pin Count :
- 4
- JESD-30 Code :
- R-PSIP-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 3MHz
- Packaging :
- Tube
- Current Rating :
- 3A
- Published :
- 2005
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Height :
- 6.22mm
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 3MHz
- Length :
- 6.73mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 10V
- Radiation Hardening :
- No
- hFE Min :
- 25
- Width :
- 2.38mm
- Number of Pins :
- 4
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.56W
- Power Dissipation :
- 1.56W
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 1.2V
- Gain Bandwidth Product :
- 3MHz
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Base Part Number :
- MJD31
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 50μA
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Datasheets
- MJD31C1G
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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