MJD31C1G
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- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock ：
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 3MHz
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 25
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Current Rating :
- 3A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 1.56W
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 6.22mm
- REACH SVHC :
- No SVHC
- Length :
- 6.73mm
- Collector Emitter Breakdown Voltage :
- 10V
- Width :
- 2.38mm
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Base Part Number :
- MJD31
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSIP-T3
- Max Power Dissipation :
- 1.56W
- Number of Terminations :
- 3
- Pin Count :
- 4
- Datasheets
- MJD31C1G
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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