MJD31C1G
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- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock ：
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.56W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 100V
- Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.2V
- Max Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSIP-T3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3A
- Max Collector Current :
- 3A
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 4
- Surface Mount :
- No
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 50μA
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Packaging :
- Tube
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 3MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Height :
- 6.22mm
- Power Dissipation :
- 1.56W
- Width :
- 2.38mm
- Collector Emitter Breakdown Voltage :
- 10V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- hFE Min :
- 25
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 6.73mm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Base Part Number :
- MJD31
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Transistor Application :
- AMPLIFIER
- Datasheets
- MJD31C1G
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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