MJD31C1G
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- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock ：
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 6.73mm
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tube
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Number of Pins :
- 4
- Base Part Number :
- MJD31
- Max Power Dissipation :
- 1.56W
- JESD-30 Code :
- R-PSIP-T3
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Published :
- 2005
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- hFE Min :
- 25
- Height :
- 6.22mm
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Width :
- 2.38mm
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 10V
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50μA
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Frequency :
- 3MHz
- Current Rating :
- 3A
- Collector Emitter Saturation Voltage :
- 1.2V
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 1.56W
- Operating Temperature :
- -65°C~150°C TJ
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Transition Frequency :
- 3MHz
- Datasheets
- MJD31C1G
MJD31C1G Documents
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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