MJD31C1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Power Dissipation :

1.56W

Voltage - Rated DC :

100V

Base Part Number :

MJD31

ECCN Code :

EAR99

Gain Bandwidth Product :

3MHz

JESD-609 Code :

e3

Packaging :

Tube

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

50μA

Transition Frequency :

3MHz

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Published :

2005

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Max Power Dissipation :

1.56W

Surface Mount :

No

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

1.2V

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Frequency :

3MHz

Mounting Type :

Through Hole

Number of Pins :

4

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSIP-T3

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

3A

Transistor Element Material :

SILICON

Height :

6.22mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Current Rating :

3A

Number of Terminations :

3

Width :

2.38mm

Pbfree Code :

yes

Number of Elements :

1

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

100V

Length :

6.73mm

Lead Free :

Lead Free

Max Breakdown Voltage :

100V

hFE Min :

25

Peak Reflow Temperature (Cel) :

260