MJD31C1G
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- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock ：
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 1.56W
- hFE Min :
- 25
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transition Frequency :
- 3MHz
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Power Dissipation :
- 1.56W
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Base Part Number :
- MJD31
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 10V
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 3MHz
- Length :
- 6.73mm
- Frequency :
- 3MHz
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Height :
- 6.22mm
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-30 Code :
- R-PSIP-T3
- Current - Collector Cutoff (Max) :
- 50μA
- Radiation Hardening :
- No
- Pin Count :
- 4
- Width :
- 2.38mm
- Max Collector Current :
- 3A
- Current Rating :
- 3A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Datasheets
- MJD31C1G
MJD31C1G Documents
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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