MJD31C1G
- Mfr.Part #
- MJD31C1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,972
- In Stock :
- 3,972
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.38mm
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- Power Dissipation :
- 1.56W
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50μA
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 100V
- Max Power Dissipation :
- 1.56W
- Max Collector Current :
- 3A
- Surface Mount :
- No
- hFE Min :
- 25
- Mounting Type :
- Through Hole
- Current Rating :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Length :
- 6.73mm
- Collector Emitter Saturation Voltage :
- 1.2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Base Part Number :
- MJD31
- Height :
- 6.22mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Operating Temperature :
- -65°C~150°C TJ
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 10V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 3MHz
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Datasheets
- MJD31C1G

NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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