MJD3055T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

60V

Weight :

4.535924g

Current Rating :

10A

Number of Elements :

1

Max Collector Current :

10A

Collector Emitter Voltage (VCEO) :

60V

hFE Min :

20

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Power Dissipation :

1.75W

Collector Base Voltage (VCBO) :

70V

Height :

2.38mm

Gain Bandwidth Product :

2MHz

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Mounting Type :

Surface Mount

Base Part Number :

MJD3055

Terminal Form :

Gull wing

Number of Terminations :

2

Length :

6.73mm

Case Connection :

COLLECTOR

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Current - Collector Cutoff (Max) :

50μA

Power Dissipation :

1.75W

Polarity/Channel Type :

NPN

Pin Count :

3

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

AMPLIFIER

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Transition Frequency :

2MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1.1V

Frequency :

2MHz

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Published :

2001

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

JESD-30 Code :

R-PSSO-G2