MJD3055T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

20

Weight :

4.535924g

Surface Mount :

yes

Element Configuration :

Single

Number of Terminations :

2

Base Part Number :

MJD3055

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.1V

Transition Frequency :

2MHz

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Current - Collector Cutoff (Max) :

50μA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

60V

Collector Emitter Voltage (VCEO) :

60V

Polarity/Channel Type :

NPN

Max Power Dissipation :

1.75W

RoHS Status :

ROHS3 Compliant

Height :

2.38mm

Transistor Element Material :

SILICON

Transistor Type :

NPN

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

2MHz

Mounting Type :

Surface Mount

Width :

6.22mm

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

60V

Case Connection :

COLLECTOR

Max Collector Current :

10A

Power Dissipation :

1.75W

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

70V

Radiation Hardening :

No

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Number of Elements :

1

Current Rating :

10A

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Frequency :

2MHz

Transistor Application :

AMPLIFIER