MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Base Part Number :
- MJD31
- Current - Collector Cutoff (Max) :
- 50μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Power Dissipation :
- 1.56W
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transition Frequency :
- 3MHz
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 10V
- Length :
- 6.73mm
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 3A
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Pins :
- 4
- Voltage - Rated DC :
- 100V
- Frequency :
- 3MHz
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Width :
- 2.38mm
- hFE Min :
- 25
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 1.56W
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 6.22mm
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Contact Plating :
- Tin
- Datasheets
- MJD31C1
MJD31C1 Documents
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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