MJD31C1

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Mfr.Part #
MJD31C1
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 100V 3A IPAK
Stock
3,823
In Stock :
3,823

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
ECCN Code :
EAR99
Number of Elements :
1
Frequency :
3MHz
Operating Temperature :
-65°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
3A
Width :
2.38mm
Max Collector Current :
3A
REACH SVHC :
No SVHC
Base Part Number :
MJD31
Peak Reflow Temperature (Cel) :
260
Polarity/Channel Type :
NPN
Transition Frequency :
3MHz
Max Power Dissipation :
1.56W
Transistor Application :
AMPLIFIER
JESD-30 Code :
R-PSIP-T3
Pin Count :
4
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
10V
Transistor Type :
NPN
Transistor Element Material :
SILICON
Published :
2005
Length :
6.73mm
Gain Bandwidth Product :
3MHz
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1.2V
JESD-609 Code :
e3
Height :
6.22mm
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Mounting Type :
Through Hole
Voltage - Rated DC :
100V
Collector Emitter Voltage (VCEO) :
100V
Number of Pins :
4
Max Breakdown Voltage :
100V
Power Dissipation :
1.56W
Element Configuration :
Single
Current - Collector Cutoff (Max) :
50μA
Surface Mount :
No
hFE Min :
25
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
Case Connection :
COLLECTOR
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
100V
Pbfree Code :
yes
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD31C1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:MJD31, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:4, MJD31C1 pinout, MJD31C1 datasheet PDF, MJD31C1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD31C1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD31C1


NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

MJD31C1G Overview


In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJD31C1G Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz


MJD31C1G Applications


There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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