MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 10V
- Packaging :
- Tube
- Power Dissipation :
- 1.56W
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- MJD31
- Max Breakdown Voltage :
- 100V
- Frequency :
- 3MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-30 Code :
- R-PSIP-T3
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 6.73mm
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.56W
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Width :
- 2.38mm
- Current Rating :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 25
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.2V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Height :
- 6.22mm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJD31C1
MJD31C1 Documents
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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