MJD31C1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

3MHz

Element Configuration :

Single

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Current Rating :

3A

Max Collector Current :

3A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Max Breakdown Voltage :

100V

Width :

2.38mm

Base Part Number :

MJD31

Pin Count :

4

Height :

6.22mm

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

hFE Min :

25

Power Dissipation :

1.56W

Frequency :

3MHz

Gain Bandwidth Product :

3MHz

Packaging :

Tube

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

1.2V

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

JESD-609 Code :

e3

Contact Plating :

Tin

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Max Power Dissipation :

1.56W

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Number of Pins :

4

Current - Collector Cutoff (Max) :

50μA

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

NPN

Length :

6.73mm

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Collector Emitter Voltage (VCEO) :

100V

Voltage - Rated DC :

100V

Mounting Type :

Through Hole

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1