MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.56W
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 6.73mm
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 10V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.2V
- Width :
- 2.38mm
- Height :
- 6.22mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Power Dissipation :
- 1.56W
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- Frequency :
- 3MHz
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 50μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transition Frequency :
- 3MHz
- Surface Mount :
- No
- JESD-30 Code :
- R-PSIP-T3
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- MJD31
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Published :
- 2005
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Pin Count :
- 4
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJD31C1
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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