MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MJD31
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Length :
- 6.73mm
- Collector Emitter Saturation Voltage :
- 1.2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 2.38mm
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- Height :
- 6.22mm
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transition Frequency :
- 3MHz
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 100V
- JESD-30 Code :
- R-PSIP-T3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 10V
- Number of Pins :
- 4
- Power Dissipation :
- 1.56W
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- hFE Min :
- 25
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 50μA
- Max Power Dissipation :
- 1.56W
- Packaging :
- Tube
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Datasheets
- MJD31C1
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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