MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Frequency :
- 3MHz
- Max Collector Current :
- 3A
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 10V
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Height :
- 6.22mm
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1.2V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.56W
- JESD-30 Code :
- R-PSIP-T3
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 3A
- hFE Min :
- 25
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Base Part Number :
- MJD31
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Width :
- 2.38mm
- Published :
- 2005
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50μA
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Length :
- 6.73mm
- Power Dissipation :
- 1.56W
- Datasheets
- MJD31C1
MJD31C1 Documents
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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