MJD3055TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

20

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

60V

Number of Terminations :

2

Collector Emitter Saturation Voltage :

1.1V

Frequency :

2MHz

Lead Free :

Lead Free

Length :

6.6mm

Terminal Form :

Gull wing

Pbfree Code :

yes

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Collector Base Voltage (VCBO) :

70V

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Weight :

260.37mg

Operating Temperature :

150°C TJ

Height :

2.3mm

Gain Bandwidth Product :

2MHz

Max Collector Current :

10A

Published :

2001

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.75W

Mounting Type :

Surface Mount

Transistor Type :

NPN

JESD-609 Code :

e3

Mount :

Surface Mount

Voltage - Rated DC :

60V

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

60V

Polarity/Channel Type :

NPN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Max Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Transition Frequency :

2MHz

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

50μA

Width :

6.1mm

Base Part Number :

MJD3055

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Power Dissipation :

1.75W

Current Rating :

10A