MJD3055TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Base Part Number :

MJD3055

Power Dissipation :

1.75W

Number of Terminations :

2

Max Breakdown Voltage :

60V

hFE Min :

20

Collector Emitter Breakdown Voltage :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Max Collector Current :

10A

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.1V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current Rating :

10A

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

60V

Published :

2001

Weight :

260.37mg

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

50μA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.1mm

Gain Bandwidth Product :

2MHz

Number of Pins :

3

ECCN Code :

EAR99

Length :

6.6mm

Frequency :

2MHz

Voltage - Rated DC :

60V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Transition Frequency :

2MHz

Element Configuration :

Single

Max Power Dissipation :

1.75W

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

70V

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Height :

2.3mm