MJD3055TF

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Mfr.Part #
MJD3055TF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 60V 10A DPAK
Stock
2,231
In Stock :
2,231

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2001
Mounting Type :
Surface Mount
Transition Frequency :
2MHz
Weight :
260.37mg
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Polarity/Channel Type :
NPN
REACH SVHC :
No SVHC
Operating Temperature :
150°C TJ
Terminal Finish :
Tin (Sn)
Base Part Number :
MJD3055
Max Breakdown Voltage :
60V
Height :
2.3mm
Radiation Hardening :
No
Transistor Element Material :
SILICON
Pbfree Code :
yes
Transistor Type :
NPN
Number of Pins :
3
Voltage - Rated DC :
60V
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
50μA
Gain Bandwidth Product :
2MHz
JESD-30 Code :
R-PSSO-G2
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Power Dissipation :
1.75W
JESD-609 Code :
e3
Factory Lead Time :
14 Weeks
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Width :
6.1mm
Collector Emitter Voltage (VCEO) :
60V
Vce Saturation (Max) @ Ib, Ic :
8V @ 3.3A, 10A
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
5V
Length :
6.6mm
Mount :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Form :
Gull wing
hFE Min :
20
Element Configuration :
Single
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
10A
Collector Emitter Breakdown Voltage :
60V
ECCN Code :
EAR99
Current Rating :
10A
Frequency :
2MHz
Collector Emitter Saturation Voltage :
1.1V
Max Power Dissipation :
1.75W
Collector Base Voltage (VCBO) :
70V
RoHS Status :
RoHS Compliant
Datasheets
MJD3055TF
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD3055TF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:MJD3055, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, MJD3055TF pinout, MJD3055TF datasheet PDF, MJD3055TF amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD3055TF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD3055TF


NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD3055TF Overview


DC current gain in this device equals 20 @ 4A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 8V @ 3.3A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.As a result, the part has a transition frequency of 2MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 10A volts.

MJD3055TF Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz


MJD3055TF Applications


There are a lot of ON Semiconductor
MJD3055TF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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