MJD3055T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

60V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Transition Frequency :

2MHz

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Mounting Type :

Surface Mount

Width :

6.2mm

Number of Pins :

3

REACH SVHC :

No SVHC

Base Part Number :

MJD305

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Frequency :

2MHz

ECCN Code :

EAR99

Max Power Dissipation :

20W

Current Rating :

10A

Power Dissipation :

20W

Length :

6.6mm

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Collector Base Voltage (VCBO) :

70V

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1

Transistor Type :

NPN

VCEsat-Max :

8 V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

Polarity/Channel Type :

NPN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn) - annealed

Gain Bandwidth Product :

2MHz

Collector Emitter Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Height :

2.4mm

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

50μA

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

RoHS Status :

ROHS3 Compliant

Max Collector Current :

10A

hFE Min :

20

JEDEC-95 Code :

TO-252AA

Collector Emitter Saturation Voltage :

1.1V

Transistor Element Material :

SILICON