MJD3055T4
- Mfr.Part #
- MJD3055T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 4,322
- In Stock :
- 4,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 2MHz
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- VCEsat-Max :
- 8 V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn) - annealed
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 70V
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 20W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max) :
- 50μA
- Current Rating :
- 10A
- Height :
- 2.4mm
- Width :
- 6.2mm
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.6mm
- Frequency :
- 2MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Base Part Number :
- MJD305
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.1V
- hFE Min :
- 20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- JEDEC-95 Code :
- TO-252AA
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 20W
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 2MHz
- Datasheets
- MJD3055T4
MJD3055T4 Documents
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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