MJD3055T4
- Mfr.Part #
- MJD3055T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 4,322
- In Stock :
- 4,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Height :
- 2.4mm
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 50μA
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Base Part Number :
- MJD305
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 2MHz
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Frequency :
- 2MHz
- Max Power Dissipation :
- 20W
- Pin Count :
- 3
- Max Collector Current :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Current Rating :
- 10A
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 70V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- hFE Min :
- 20
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 20W
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Length :
- 6.6mm
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 1.1V
- Transition Frequency :
- 2MHz
- VCEsat-Max :
- 8 V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Width :
- 6.2mm
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJD3055T4
MJD3055T4 Documents
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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