MJD3055T4
- Mfr.Part #
- MJD3055T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 4,322
- In Stock :
- 4,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 20
- Collector Emitter Saturation Voltage :
- 1.1V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 2MHz
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 10A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-252AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Base Part Number :
- MJD305
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- VCEsat-Max :
- 8 V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Type :
- NPN
- Frequency :
- 2MHz
- Collector Base Voltage (VCBO) :
- 70V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 20W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 20W
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 60V
- Height :
- 2.4mm
- Case Connection :
- COLLECTOR
- Width :
- 6.2mm
- Transition Frequency :
- 2MHz
- Length :
- 6.6mm
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Max Collector Current :
- 10A
- Operating Temperature :
- 150°C TJ
- Datasheets
- MJD3055T4
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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