MJD3055T4
- Mfr.Part #
- MJD3055T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 4,322
- In Stock :
- 4,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 20W
- Current - Collector Cutoff (Max) :
- 50μA
- Max Breakdown Voltage :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- MJD305
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 2MHz
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 20W
- Max Collector Current :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Length :
- 6.6mm
- hFE Min :
- 20
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Mount :
- Surface Mount
- VCEsat-Max :
- 8 V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 70V
- JESD-609 Code :
- e3
- Transition Frequency :
- 2MHz
- Height :
- 2.4mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 10A
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-252AA
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- Width :
- 6.2mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Collector Emitter Saturation Voltage :
- 1.1V
- Frequency :
- 2MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Datasheets
- MJD3055T4
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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