MJD3055T4

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Mfr.Part #
MJD3055T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 60V 10A DPAK
Stock
4,322
In Stock :
4,322

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
8V @ 3.3A, 10A
Factory Lead Time :
8 Weeks
Power Dissipation :
20W
Current - Collector Cutoff (Max) :
50μA
Max Breakdown Voltage :
60V
JESD-30 Code :
R-PSSO-G2
Base Part Number :
MJD305
REACH SVHC :
No SVHC
Gain Bandwidth Product :
2MHz
Case Connection :
COLLECTOR
Operating Temperature :
150°C TJ
Max Power Dissipation :
20W
Max Collector Current :
10A
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Length :
6.6mm
hFE Min :
20
Lead Free :
Lead Free
Number of Pins :
3
Mount :
Surface Mount
VCEsat-Max :
8 V
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
70V
JESD-609 Code :
e3
Transition Frequency :
2MHz
Height :
2.4mm
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
10A
Element Configuration :
Single
Transistor Type :
NPN
Transistor Element Material :
SILICON
Pin Count :
3
Number of Terminations :
2
Collector Emitter Breakdown Voltage :
60V
Packaging :
Tape and Reel (TR)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
30
JEDEC-95 Code :
TO-252AA
Voltage - Rated DC :
60V
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
60V
Width :
6.2mm
Terminal Finish :
Matte Tin (Sn) - annealed
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Collector Emitter Saturation Voltage :
1.1V
Frequency :
2MHz
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Datasheets
MJD3055T4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MJD3055T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD305, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, MJD3055T4 pinout, MJD3055T4 datasheet PDF, MJD3055T4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MJD3055T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MJD3055T4


NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD3055T4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.

MJD3055T4 Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz


MJD3055T4 Applications


There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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