MJD3055T4
- Mfr.Part #
- MJD3055T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 4,322
- In Stock :
- 4,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Power Dissipation :
- 20W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Width :
- 6.2mm
- Current - Collector Cutoff (Max) :
- 50μA
- Current Rating :
- 10A
- Power Dissipation :
- 20W
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 60V
- hFE Min :
- 20
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Frequency :
- 2MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- Base Part Number :
- MJD305
- Height :
- 2.4mm
- Transition Frequency :
- 2MHz
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 70V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Length :
- 6.6mm
- VCEsat-Max :
- 8 V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-252AA
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 2MHz
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Max Collector Current :
- 10A
- Datasheets
- MJD3055T4
MJD3055T4 Documents
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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