MJD3055
- Mfr.Part #
- MJD3055
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A DPAK
- Stock
- 53,941
- In Stock :
- 53,941
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Width :
- 6.2mm
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.4mm
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 2MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation :
- 20W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- 1.1V
- Radiation Hardening :
- No
- Frequency :
- 2MHz
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- VCEsat-Max :
- 8 V
- Base Part Number :
- MJD305
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Terminal Form :
- Gull wing
- Current Rating :
- 10A
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50μA
- Max Power Dissipation :
- 20W
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 2MHz
- Number of Terminations :
- 2
- hFE Min :
- 20
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Length :
- 6.6mm
- Collector Base Voltage (VCBO) :
- 70V
- Datasheets
- MJD3055

NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD3055T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 2MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 10A volts can be achieved.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of STMicroelectronics
MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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