MJD31C-13
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- Mfr.Part #
- MJD31C-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO252
- Stock
- 11,374
- In Stock ：
- 11,374
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Width :
- 6.2mm
- Weight :
- 350.003213mg
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 1.2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 3MHz
- Current - Collector Cutoff (Max) :
- 1μA
- Continuous Collector Current :
- 3A
- Mount :
- Surface Mount
- Power Dissipation :
- 1.5W
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.56W
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Length :
- 6.8mm
- Transition Frequency :
- 3MHz
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-609 Code :
- e3
- Height :
- 2.4mm
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- MJD31C
- Element Configuration :
- Single
- Pin Count :
- 3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2016
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- hFE Min :
- 25
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJD31C-13
MJD31C-13 Documents
NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31C-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD31C-13 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz
MJD31C-13 Applications
There are a lot of Diodes Incorporated
MJD31C-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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