MJD31C-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

100V

Factory Lead Time :

15 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Collector Current :

3A

Collector Emitter Breakdown Voltage :

100V

Width :

6.2mm

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

3MHz

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

350.003213mg

Power Dissipation :

1.5W

Max Collector Current :

3A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Collector Emitter Saturation Voltage :

1.2V

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Transition Frequency :

3MHz

Max Power Dissipation :

1.56W

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

100V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1μA

Emitter Base Voltage (VEBO) :

6V

Transistor Type :

NPN

JESD-609 Code :

e3

Element Configuration :

Single

Transistor Application :

SWITCHING

Pin Count :

3

Polarity/Channel Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Published :

2016

Terminal Form :

Gull wing

hFE Min :

25

Mount :

Surface Mount

Base Part Number :

MJD31C

Height :

2.4mm

Pbfree Code :

yes

Length :

6.8mm

Number of Elements :

1

Frequency :

3MHz

ECCN Code :

EAR99

Radiation Hardening :

No

Mounting Type :

Surface Mount