MJD31C-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Radiation Hardening :

No

Base Part Number :

MJD31C

Current - Collector Cutoff (Max) :

1μA

Max Collector Current :

3A

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PSSO-G2

Weight :

350.003213mg

Max Power Dissipation :

1.56W

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

1.2V

Collector Base Voltage (VCBO) :

100V

Width :

6.2mm

Continuous Collector Current :

3A

Mount :

Surface Mount

Power Dissipation :

1.5W

Transition Frequency :

3MHz

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

hFE Min :

25

Lead Free :

Lead Free

Height :

2.4mm

Transistor Type :

NPN

Published :

2016

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Max Breakdown Voltage :

100V

Collector Emitter Voltage (VCEO) :

100V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

COLLECTOR

Length :

6.8mm

Gain Bandwidth Product :

3MHz

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

100V

Terminal Finish :

Matte Tin (Sn)

Frequency :

3MHz

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

6V