MJD31C-13

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Mfr.Part #
MJD31C-13
Manufacturer
Diodes Incorporated
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 3A TO252
Stock
11,374
In Stock :
11,374

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
REACH SVHC :
No SVHC
Width :
6.2mm
Weight :
350.003213mg
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
15 Weeks
Collector Emitter Saturation Voltage :
1.2V
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tape and Reel (TR)
Gain Bandwidth Product :
3MHz
Current - Collector Cutoff (Max) :
1μA
Continuous Collector Current :
3A
Mount :
Surface Mount
Power Dissipation :
1.5W
Transistor Application :
SWITCHING
Max Power Dissipation :
1.56W
Number of Pins :
3
Case Connection :
COLLECTOR
Length :
6.8mm
Transition Frequency :
3MHz
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
JESD-609 Code :
e3
Height :
2.4mm
JESD-30 Code :
R-PSSO-G2
Base Part Number :
MJD31C
Element Configuration :
Single
Pin Count :
3
Pbfree Code :
yes
ECCN Code :
EAR99
Max Collector Current :
3A
Max Breakdown Voltage :
100V
Emitter Base Voltage (VEBO) :
6V
Published :
2016
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
hFE Min :
25
Collector Emitter Voltage (VCEO) :
100V
Collector Base Voltage (VCBO) :
100V
Collector Emitter Breakdown Voltage :
100V
Frequency :
3MHz
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated MJD31C-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, Base Part Number:MJD31C, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, MJD31C-13 pinout, MJD31C-13 datasheet PDF, MJD31C-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated MJD31C-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated MJD31C-13


NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD31C-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.

MJD31C-13 Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz


MJD31C-13 Applications


There are a lot of Diodes Incorporated
MJD31C-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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