MJD31C-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.8mm

Element Configuration :

Single

Number of Pins :

3

Number of Terminations :

2

Transistor Application :

SWITCHING

hFE Min :

25

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Emitter Base Voltage (VEBO) :

6V

Polarity/Channel Type :

NPN

Power Dissipation :

1.5W

Factory Lead Time :

15 Weeks

JESD-30 Code :

R-PSSO-G2

Transistor Type :

NPN

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Width :

6.2mm

Lead Free :

Lead Free

Pbfree Code :

yes

Max Power Dissipation :

1.56W

Collector Base Voltage (VCBO) :

100V

Max Collector Current :

3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Weight :

350.003213mg

RoHS Status :

ROHS3 Compliant

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Saturation Voltage :

1.2V

Collector Emitter Voltage (VCEO) :

100V

Frequency :

3MHz

Number of Elements :

1

Max Breakdown Voltage :

100V

JESD-609 Code :

e3

Gain Bandwidth Product :

3MHz

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Collector Current :

3A

Radiation Hardening :

No

Base Part Number :

MJD31C

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Pin Count :

3

Collector Emitter Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Height :

2.4mm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Transition Frequency :

3MHz

Case Connection :

COLLECTOR