MJD3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

50μA

Transistor Type :

NPN

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Max Collector Current :

10A

Pin Count :

3

Collector Emitter Saturation Voltage :

1.1V

Voltage - Rated DC :

60V

Frequency :

2MHz

Number of Terminations :

2

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

70V

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Weight :

4.535924g

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Current Rating :

10A

hFE Min :

20

Mounting Type :

Surface Mount

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.75W

Surface Mount :

yes

Length :

6.73mm

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Published :

2002

Width :

6.22mm

Transition Frequency :

2MHz

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Base Part Number :

MJD3055

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

1.75W

Height :

2.38mm

JESD-30 Code :

R-PSSO-G2

Gain Bandwidth Product :

2MHz

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Number of Pins :

3