MJD31C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.2V

Collector Emitter Voltage (VCEO) :

100V

Current Rating :

3A

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

3MHz

Max Power Dissipation :

1.56W

Packaging :

Tube

Published :

2005

Max Collector Current :

3A

Current - Collector Cutoff (Max) :

50μA

Voltage - Rated DC :

100V

Transistor Application :

AMPLIFIER

Height :

2.3876mm

Number of Pins :

3

Operating Temperature :

-65°C~150°C TJ

Length :

6.7056mm

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Surface Mount :

yes

Pin Count :

3

Frequency :

3MHz

Case Connection :

COLLECTOR

hFE Min :

25

Width :

6.223mm

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Base Part Number :

MJD31

Power Dissipation :

1.56W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transition Frequency :

3MHz

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Number of Elements :

1

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Contact Plating :

Tin

JESD-609 Code :

e3