MJD31C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MJD31

Number of Elements :

1

Current Rating :

3A

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.2V

Pin Count :

3

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

3A

Max Power Dissipation :

1.56W

hFE Min :

25

Height :

2.3876mm

Collector Emitter Voltage (VCEO) :

100V

Element Configuration :

Single

Transistor Element Material :

SILICON

Transition Frequency :

3MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Packaging :

Tube

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Published :

2005

REACH SVHC :

No SVHC

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

100V

Contact Plating :

Tin

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Length :

6.7056mm

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Gain Bandwidth Product :

3MHz

Pbfree Code :

yes

Frequency :

3MHz

Power Dissipation :

1.56W

Width :

6.223mm

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

50μA

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2