MJD31C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Length :

6.7056mm

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

hFE Min :

25

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Frequency :

3MHz

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Radiation Hardening :

No

Base Part Number :

MJD31

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

100V

JESD-30 Code :

R-PSSO-G2

Current - Collector Cutoff (Max) :

50μA

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Max Collector Current :

3A

Transistor Type :

NPN

Transition Frequency :

3MHz

Polarity/Channel Type :

NPN

Factory Lead Time :

8 Weeks

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Power Dissipation :

1.56W

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

1.2V

ECCN Code :

EAR99

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.56W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gain Bandwidth Product :

3MHz

Current Rating :

3A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Height :

2.3876mm

Case Connection :

COLLECTOR

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

100V

Published :

2005

Terminal Form :

Gull wing

Surface Mount :

yes

Width :

6.223mm

Voltage - Rated DC :

100V