MJD32CT4-A
- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock :
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- JEDEC-95 Code :
- TO-252AA
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 15W
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Power Dissipation :
- 15W
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MJD32
- Current - Collector Cutoff (Max) :
- 50μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- MJD32CT4-A
MJD32CT4-A Documents
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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