MJD32CT4-A
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- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock ：
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 15W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Collector Base Voltage (VCBO) :
- 100V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MJD32
- Max Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Power Dissipation :
- 15W
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 50μA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MJD32CT4-A
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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