MJD32CT4-A
- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock :
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Power Dissipation :
- 15W
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 15W
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Factory Lead Time :
- 8 Weeks
- JEDEC-95 Code :
- TO-252AA
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- MJD32
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- MJD32CT4-A
MJD32CT4-A Documents
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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