MJD32CT4-A
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- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock ：
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Power Dissipation :
- 15W
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 50μA
- JEDEC-95 Code :
- TO-252AA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 15W
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Application :
- SWITCHING
- Base Part Number :
- MJD32
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Datasheets
- MJD32CT4-A
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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