MJD32CT4-A
- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock :
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Max Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 15W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- MJD32
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Power Dissipation :
- 15W
- JEDEC-95 Code :
- TO-252AA
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Datasheets
- MJD32CT4-A
MJD32CT4-A Documents
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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