MJD32CT4-A
- Mfr.Part #
- MJD32CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 15,062
- In Stock :
- 15,062
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Collector Emitter Voltage (VCEO) :
- 100V
- JEDEC-95 Code :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 15W
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Base Part Number :
- MJD32
- Terminal Form :
- Gull wing
- Power Dissipation :
- 15W
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Surface Mount
- Datasheets
- MJD32CT4-A
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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