MJD31CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

100V

Pin Count :

3

Base Part Number :

MJD31

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.38mm

Max Collector Current :

3A

Current - Collector Cutoff (Max) :

50μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

hFE Min :

25

Current Rating :

3A

Polarity/Channel Type :

NPN

Width :

6.22mm

Frequency :

3MHz

Max Power Dissipation :

1.56W

Published :

2005

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Pbfree Code :

yes

Max Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Elements :

1

Voltage - Rated DC :

100V

Transition Frequency :

3MHz

ECCN Code :

EAR99

Number of Pins :

3

Length :

6.73mm

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Gain Bandwidth Product :

3MHz

Transistor Type :

NPN

Terminal Form :

Gull wing

Power Dissipation :

1.56W

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

1.2V

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

100V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

100V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2