MJD31CT4
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- Mfr.Part #
- MJD31CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 16,492
- In Stock ：
- 16,492
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 2.4mm
- Current - Collector Cutoff (Max) :
- 50μA
- Voltage - Rated DC :
- 100V
- Max Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 20
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 1.2V
- Width :
- 6.2mm
- Power Dissipation :
- 15W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- MJD31
- Element Configuration :
- Single
- Length :
- 6.6mm
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Polarity/Channel Type :
- PNP
- Current Rating :
- 3A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Power Dissipation :
- 15W
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- MJD31CT4
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CT4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD31CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
MJD31CT4 Applications
There are a lot of STMicroelectronics
MJD31CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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