MJD2955T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Terminal Form :

Gull wing

Transition Frequency :

2MHz

Transistor Type :

PNP

Frequency :

2MHz

Current - Collector Cutoff (Max) :

50μA

Width :

6.22mm

Max Collector Current :

10A

Height :

2.38mm

Current Rating :

-10A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

60V

Lead Free :

Lead Free

Max Power Dissipation :

1.75W

Gain Bandwidth Product :

2MHz

Voltage - Rated DC :

-60V

Case Connection :

COLLECTOR

JESD-30 Code :

R-PSSO-G2

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Published :

2002

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Factory Lead Time :

22 Weeks

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

70V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

60V

Base Part Number :

MJD2955

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

20W

ECCN Code :

EAR99

Length :

6.73mm

Number of Terminations :

2

Max Junction Temperature (Tj) :

150°C

hFE Min :

20

Collector Emitter Breakdown Voltage :

60V

Number of Pins :

3

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Collector Emitter Saturation Voltage :

1.1V

Pin Count :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)