MJD2955G
- Mfr.Part #
- MJD2955G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A DPAK
- Stock
- 4,199
- In Stock :
- 4,199
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Max Collector Current :
- 10A
- Voltage - Rated DC :
- -60V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Base Part Number :
- MJD2955
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Surface Mount :
- yes
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- -10A
- Gain Bandwidth Product :
- 2MHz
- Max Power Dissipation :
- 1.75W
- Published :
- 2002
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 2.3876mm
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.75W
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50μA
- Length :
- 6.7056mm
- Frequency :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Number of Elements :
- 1
- Transition Frequency :
- 2MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 70V
- Width :
- 6.223mm
- Collector Emitter Saturation Voltage :
- 1.1V
- hFE Min :
- 20
- Datasheets
- MJD2955G

PNP -55°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD2955G Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MJD2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJD2955G Applications
There are a lot of ON Semiconductor
MJD2955G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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