MJD253-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

4

Element Configuration :

Single

Gain Bandwidth Product :

40MHz

Halogen Free :

Halogen Free

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Max Collector Current :

4A

Height :

2.38mm

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

100V

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

-100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Length :

6.73mm

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

100V

Packaging :

Tube

Collector Emitter Breakdown Voltage :

100V

Collector Emitter Saturation Voltage :

600mV

JESD-609 Code :

e3

Width :

6.35mm

Number of Elements :

1

Max Power Dissipation :

12.5W

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Lead Free :

Lead Free

Current Rating :

-4A

Power Dissipation :

1.4W

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-30 Code :

R-PSIP-T3

Base Part Number :

MJD253

Pin Count :

4

ECCN Code :

EAR99

Mounting Type :

Through Hole

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

hFE Min :

40

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

RoHS Status :

ROHS3 Compliant

Frequency :

40MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Transition Frequency :

40MHz

Pbfree Code :

yes