MJD253-001

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4A

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

hFE Min :

40

Pbfree Code :

No

Published :

2007

Collector Emitter Saturation Voltage :

600mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Case Connection :

COLLECTOR

Base Part Number :

MJD253

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Current Rating :

-4A

Max Collector Current :

4A

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Emitter Base Voltage (VEBO) :

7V

Pin Count :

4

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

1.4W

Collector Emitter Voltage (VCEO) :

600mV

Transition Frequency :

40MHz

Transistor Type :

PNP

Lead Free :

Contains Lead

Number of Pins :

4

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Surface Mount :

No

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gain Bandwidth Product :

40MHz

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Voltage - Rated DC :

-100V