MJD243T4G

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Mfr.Part #
MJD243T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 4A DPAK
Stock
12,686
In Stock :
12,686

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PSSO-G2
Collector Emitter Voltage (VCEO) :
100V
hFE Min :
40
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
2
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Base Part Number :
MJD243
Pbfree Code :
yes
Halogen Free :
Halogen Free
Mounting Type :
Surface Mount
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Saturation Voltage :
600mV
Max Power Dissipation :
12.5W
Collector Base Voltage (VCBO) :
100V
Polarity/Channel Type :
NPN
Pin Count :
3
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Breakdown Voltage :
100V
Max Breakdown Voltage :
100V
Factory Lead Time :
8 Weeks
Frequency :
40MHz
Length :
6.73mm
Lead Free :
Lead Free
Element Configuration :
Single
Max Collector Current :
4A
Emitter Base Voltage (VEBO) :
7V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
ECCN Code :
EAR99
Height :
2.38mm
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Current Rating :
4A
Number of Elements :
1
Voltage - Rated DC :
100V
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
AMPLIFIER
Published :
2005
Gain Bandwidth Product :
40MHz
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Case Connection :
COLLECTOR
Power Dissipation :
1.4W
Transistor Type :
NPN
Width :
6.22mm
REACH SVHC :
No SVHC
Transition Frequency :
40MHz
Datasheets
MJD243T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD243T4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:MJD243, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, MJD243T4G pinout, MJD243T4G datasheet PDF, MJD243T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD243T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD243T4G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD243T4G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

MJD243T4G Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz


MJD243T4G Applications


There are a lot of ON Semiconductor
MJD243T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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