MJD243T4
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- Mfr.Part #
- MJD243T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR NPN 4A 100V DPAK
- Stock
- 2,719
- In Stock ：
- 2,719
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 4A
- Transition Frequency :
- 40MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.4W
- Base Part Number :
- MJD243
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 40
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Length :
- 6.73mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 12.5W
- ECCN Code :
- EAR99
- Width :
- 6.22mm
- Gain Bandwidth Product :
- 40MHz
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 600mV
- Max Breakdown Voltage :
- 100V
- Frequency :
- 40MHz
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Voltage - Rated DC :
- 100V
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- Published :
- 2005
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Halogen Free :
- Halogen Free
- Height :
- 2.38mm
- Number of Pins :
- 3
- Datasheets
- MJD243T4
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD243T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
MJD243T4G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243T4G Applications
There are a lot of ON Semiconductor
MJD243T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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