MJD243G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

100V

Published :

2007

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Width :

6.35mm

Packaging :

Tube

Factory Lead Time :

8 Weeks

hFE Min :

40

Frequency :

40MHz

Max Collector Current :

4A

Gain Bandwidth Product :

40MHz

Collector Emitter Breakdown Voltage :

100V

Current Rating :

4A

Collector Emitter Saturation Voltage :

600mV

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Height :

6.35mm

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

1.4W

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

100V

Halogen Free :

Halogen Free

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Radiation Hardening :

No

Transition Frequency :

40MHz

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Max Power Dissipation :

1.4W

Length :

6.35mm

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

7V

Base Part Number :

MJD243

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Elements :

1

Transistor Type :

NPN

Number of Terminations :

2

Polarity/Channel Type :

NPN