IXFK120N30T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

300V

Series :

GigaMOS™

Package / Case :

TO-264-3, TO-264AA

Continuous Drain Current (ID) :

120A

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Type :

GigaMOS Power MOSFET

Mounting Style :

Through Hole

Product Status :

Active

Product Category :

MOSFET

DS Breakdown Voltage-Min :

300V

Case Connection :

DRAIN

Base Product Number :

IXFK120

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

330A

Power Dissipation-Max (Abs) :

960 W

Drain-source On Resistance-Max :

0.024Ohm

JEDEC-95 Code :

TO-264AA

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Unknown

Terminal Position :

Single

Number of Channels :

1 Channel

Rds On Max :

24 mΩ

Terminal Form :

THROUGH-HOLE

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Power Dissipation-Max :

960W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

960 W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Height :

26.16 mm

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 4mA

Published :

2009

Terminal Finish :

TIN SILVER COPPER

Rise Time :

31 ns

Additional Feature :

AVALANCHE RATED

Input Capacitance :

20 nF

Supplier Device Package :

TO-264AA (IXFK)

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Number of Elements :

1

RoHS :

Compliant

Mount :

Through Hole

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Avalanche Energy Rating (Eas) :

2500 mJ

Drain Current-Max (Abs) (ID) :

120 A

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Width :

5.13 mm

Length :

19.96 mm

Factory Lead Time :

30 Weeks

Pbfree Code :

yes

Power Dissipation (Max) :

960W (Tc)

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Number of Terminations :

3