IXFK140N30P

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Mfr.Part #
IXFK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264AA
Stock
1,380
In Stock :
1,380

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Power Dissipation :
1.04kW
Turn-Off Delay Time :
100 ns
Continuous Drain Current (ID) :
140A
Drain Current-Max (Abs) (ID) :
140 A
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Fall Time (Typ) :
20 ns
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Application :
SWITCHING
Length :
20.29 mm
Width :
5.31 mm
Drain-source On Resistance-Max :
0.024 Ω
Resistance :
24mOhm
JESD-609 Code :
e1
Transistor Type :
1 N-Channel
Power Dissipation-Max :
1040W Tc
ECCN Code :
EAR99
Series :
HiPerFET™, PolarP2™
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Tradename :
HiPerFET
Threshold Voltage :
5V
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
300 A
Number of Terminations :
3
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-264AA (IXFK)
FET Feature :
--
Package / Case :
TO-264-3, TO-264AA
Packaging :
Tube
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
REACH SVHC :
No SVHC
RoHS :
Details
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
300 V
Avalanche Energy Rating (Eas) :
5000 mJ
Drain to Source Voltage (Vdss) :
300V
Power Dissipation (Max) :
1040W (Tc)
Mount :
Through Hole
Rise Time :
30ns
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Continuous Drain Current Id :
140A
Qualification :
-
Product Status :
Active
Pin Count :
3
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Base Product Number :
IXFK140
Surface Mount :
No
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
MSL :
-
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Vgs (Max) :
±20V
Channel Type :
N Channel
Mounting Style :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Drain to Source Breakdown Voltage :
300V
Transistor Polarity :
N-Channel
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-264AA
Power Dissipation-Max (Abs) :
1040 W
FET Type :
N-Channel
Height :
26.59 mm
Number of Elements :
1
Number of Terminals :
3
Datasheets
IXFK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFK140N30P pinout, IXFK140N30P datasheet PDF, IXFK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK140N30P


N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXFK140N30P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFK140N30P Applications


There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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