IXFK140N30P

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Mfr.Part #
IXFK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264AA
Stock
1,380
In Stock :
1,380

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Series :
HiPerFET™, PolarP2™
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
MSL :
-
Drain to Source Voltage (Vdss) :
300V
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Vgs (Max) :
±20V
Length :
20.29 mm
Pbfree Code :
yes
Power Dissipation-Max :
1040W Tc
Element Configuration :
Single
Fall Time (Typ) :
20 ns
Qualification Status :
Not Qualified
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection :
DRAIN
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Resistance :
24mOhm
Transistor Polarity :
N-Channel
Number of Terminations :
3
Number of Channels :
1 Channel
Width :
5.31 mm
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
300V
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Number of Elements :
1
Surface Mount :
No
Rise Time :
30ns
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
5V
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e1
REACH SVHC :
No SVHC
Turn-Off Delay Time :
100 ns
DS Breakdown Voltage-Min :
300 V
Drain Current-Max (Abs) (ID) :
140 A
JEDEC-95 Code :
TO-264AA
Package / Case :
TO-264-3, TO-264AA
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Height :
26.59 mm
Power Dissipation (Max) :
1040W (Tc)
Continuous Drain Current (ID) :
140A
Product Status :
Active
Brand :
IXYS
Configuration :
Single
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.024 Ω
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Published :
2006
Base Product Number :
IXFK140
Power Dissipation-Max (Abs) :
1040 W
Channel Type :
N Channel
Continuous Drain Current Id :
140A
Qualification :
-
Vgs(th) (Max) @ Id :
5V @ 8mA
Supplier Device Package :
TO-264AA (IXFK)
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Pulsed Drain Current-Max (IDM) :
300 A
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
FET Type :
N-Channel
Number of Terminals :
3
RoHS :
Details
Packaging :
Tube
Avalanche Energy Rating (Eas) :
5000 mJ
Power Dissipation :
1.04kW
Number of Pins :
3
Mounting Type :
Through Hole
Datasheets
IXFK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, IXFK140N30P pinout, IXFK140N30P datasheet PDF, IXFK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK140N30P


N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXFK140N30P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFK140N30P Applications


There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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