IXFK140N30P
- Mfr.Part #
- IXFK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264AA
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.024 Ω
- REACH SVHC :
- No SVHC
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Qualification :
- -
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Continuous Drain Current (ID) :
- 140A
- Height :
- 26.59 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXFK140
- JEDEC-95 Code :
- TO-264AA
- Published :
- 2006
- Power Dissipation-Max (Abs) :
- 1040 W
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Type :
- N Channel
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HiPerFET
- Resistance :
- 24mOhm
- Package :
- Tube
- FET Feature :
- --
- Radiation Hardening :
- No
- Product Type :
- MOSFET
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 300V
- Width :
- 5.31 mm
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 20 ns
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Power Dissipation :
- 1.04kW
- MSL :
- -
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Transistor Polarity :
- N-Channel
- Threshold Voltage :
- 5V
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 100 ns
- Series :
- HiPerFET™, PolarP2™
- Product Status :
- Active
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Length :
- 20.29 mm
- Power Dissipation-Max :
- 1040W Tc
- Power Dissipation (Max) :
- 1040W (Tc)
- Rise Time :
- 30ns
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Continuous Drain Current Id :
- 140A
- Supplier Device Package :
- TO-264AA (IXFK)
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Breakdown Voltage :
- 300V
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Drain Current-Max (Abs) (ID) :
- 140 A
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- RoHS :
- Details
- Package / Case :
- TO-264-3, TO-264AA
- DS Breakdown Voltage-Min :
- 300 V
- Terminal Position :
- Single
- Datasheets
- IXFK140N30P

N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXFK140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK140N30P Applications
There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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