IXFK140N30P

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Mfr.Part #
IXFK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264AA
Stock
1,380
In Stock :
1,380

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
Product Category :
MOSFET
Packaging :
Tube
Continuous Drain Current (ID) :
140A
Product Type :
MOSFET
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Operating Temperature :
-55°C~150°C TJ
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Rise Time :
30ns
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Drain Current-Max (Abs) (ID) :
140 A
Drain to Source Voltage (Vdss) :
300V
Transistor Polarity :
N-Channel
Resistance :
24mOhm
Turn-Off Delay Time :
100 ns
Power Dissipation (Max) :
1040W (Tc)
REACH SVHC :
No SVHC
Length :
20.29 mm
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-264AA (IXFK)
Package / Case :
TO-264-3, TO-264AA
Brand :
IXYS
DS Breakdown Voltage-Min :
300 V
Vgs (Max) :
±20V
Radiation Hardening :
No
Case Connection :
DRAIN
JESD-609 Code :
e1
Number of Pins :
3
Drain-source On Resistance-Max :
0.024 Ω
Number of Terminals :
3
Series :
HiPerFET™, PolarP2™
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
MSL :
-
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Fall Time (Typ) :
20 ns
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Mounting Type :
Through Hole
Power Dissipation :
1.04kW
Mount :
Through Hole
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Width :
5.31 mm
Number of Terminations :
3
Threshold Voltage :
5V
Operating Mode :
ENHANCEMENT MODE
Published :
2006
Height :
26.59 mm
Vgs(th) (Max) @ Id :
5V @ 8mA
Pbfree Code :
yes
Package :
Tube
Pulsed Drain Current-Max (IDM) :
300 A
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Channel Type :
N Channel
Qualification :
-
Power Dissipation-Max :
1040W Tc
Base Product Number :
IXFK140
FET Feature :
--
Avalanche Energy Rating (Eas) :
5000 mJ
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Power Dissipation-Max (Abs) :
1040 W
ECCN Code :
EAR99
Configuration :
Single
Drain to Source Breakdown Voltage :
300V
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current Id :
140A
JEDEC-95 Code :
TO-264AA
Surface Mount :
No
Datasheets
IXFK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXFK140N30P pinout, IXFK140N30P datasheet PDF, IXFK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK140N30P


N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXFK140N30P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFK140N30P Applications


There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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