IXFK140N30P
- Mfr.Part #
- IXFK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264AA
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 1040 W
- Continuous Drain Current Id :
- 140A
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Series :
- HiPerFET™, PolarP2™
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Mounting Style :
- Through Hole
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 100 ns
- Packaging :
- Tube
- Resistance :
- 24mOhm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Threshold Voltage :
- 5V
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Channel Mode :
- Enhancement
- Rise Time :
- 30ns
- Drain-source On Resistance-Max :
- 0.024 Ω
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Pulsed Drain Current-Max (IDM) :
- 300 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 20 ns
- Drain to Source Breakdown Voltage :
- 300V
- Qualification :
- -
- Supplier Device Package :
- TO-264AA (IXFK)
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- RoHS :
- Details
- Power Dissipation-Max :
- 1040W Tc
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Brand :
- IXYS
- Number of Pins :
- 3
- Configuration :
- Single
- Power Dissipation :
- 1.04kW
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Base Product Number :
- IXFK140
- Channel Type :
- N Channel
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Product Category :
- MOSFET
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- MSL :
- -
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 1040W (Tc)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 140A
- Published :
- 2006
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 300V
- DS Breakdown Voltage-Min :
- 300 V
- JESD-609 Code :
- e1
- Length :
- 20.29 mm
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Height :
- 26.59 mm
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Drain Current-Max (Abs) (ID) :
- 140 A
- Width :
- 5.31 mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFK140N30P

N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXFK140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK140N30P Applications
There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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