IXFK140N30P
- Mfr.Part #
- IXFK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264AA
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 140A
- Power Dissipation-Max :
- 1040W Tc
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Element Configuration :
- Single
- Base Product Number :
- IXFK140
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Drain Current-Max (Abs) (ID) :
- 140 A
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 1040 W
- Width :
- 5.31 mm
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1040W (Tc)
- MSL :
- -
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 140A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 100 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 5V
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.024 Ω
- Drain to Source Breakdown Voltage :
- 300V
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e1
- Resistance :
- 24mOhm
- Fall Time (Typ) :
- 20 ns
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- RoHS :
- Details
- Length :
- 20.29 mm
- Rise Time :
- 30ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Type :
- N Channel
- Surface Mount :
- No
- Packaging :
- Tube
- Number of Terminals :
- 3
- Height :
- 26.59 mm
- Drain to Source Voltage (Vdss) :
- 300V
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Radiation Hardening :
- No
- Reach Compliance Code :
- Compliant
- Tradename :
- HiPerFET
- Package :
- Tube
- Product Status :
- Active
- Supplier Device Package :
- TO-264AA (IXFK)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- FET Feature :
- --
- Series :
- HiPerFET™, PolarP2™
- DS Breakdown Voltage-Min :
- 300 V
- Power Dissipation :
- 1.04kW
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Number of Pins :
- 3
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- JEDEC-95 Code :
- TO-264AA
- Qualification :
- -
- Datasheets
- IXFK140N30P

N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXFK140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK140N30P Applications
There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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