IXFK140N30P
- Mfr.Part #
- IXFK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264AA
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Resistance :
- 24mOhm
- Base Product Number :
- IXFK140
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Series :
- HiPerFET™, PolarP2™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 140A
- Height :
- 26.59 mm
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 1040 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 300 V
- MSL :
- -
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Drain to Source Breakdown Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Power Dissipation :
- 1.04kW
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Power Dissipation (Max) :
- 1040W (Tc)
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Radiation Hardening :
- No
- Channel Type :
- N Channel
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Transistor Polarity :
- N-Channel
- Continuous Drain Current Id :
- 140A
- Drain to Source Voltage (Vdss) :
- 300V
- Power Dissipation-Max :
- 1040W Tc
- JEDEC-95 Code :
- TO-264AA
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Threshold Voltage :
- 5V
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Length :
- 20.29 mm
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Drain Current-Max (Abs) (ID) :
- 140 A
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 0.024 Ω
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 5.31 mm
- Manufacturer :
- IXYS
- Qualification :
- -
- Fall Time (Typ) :
- 20 ns
- Element Configuration :
- Single
- Package :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Style :
- Through Hole
- Number of Pins :
- 3
- FET Feature :
- --
- Rise Time :
- 30ns
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Configuration :
- Single
- Surface Mount :
- No
- Turn-Off Delay Time :
- 100 ns
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Lead Free :
- Lead Free
- Datasheets
- IXFK140N30P
IXFK140N30P Documents

N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXFK140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK140N30P Applications
There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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