IXFK140N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

300 A

Qualification :

-

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Channel Type :

N Channel

Length :

20.29 mm

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Pin Count :

3

Brand :

IXYS

Drain to Source Voltage (Vdss) :

300V

Power Dissipation (Max) :

1040W (Tc)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

300V

Rds On (Max) @ Id, Vgs :

24m Ω @ 70A, 10V

Product Status :

Active

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Width :

5.31 mm

Base Product Number :

IXFK140

Tradename :

HiPerFET

Published :

2006

Packaging :

Tube

Series :

HiPerFET™, PolarP2™

Pbfree Code :

yes

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

1040 W

Turn-Off Delay Time :

100 ns

Element Configuration :

Single

Case Connection :

DRAIN

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

5000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

140 A

Package Shape :

RECTANGULAR

RoHS :

Details

MSL :

-

Surface Mount :

No

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.024 Ω

Qualification Status :

Not Qualified

Continuous Drain Current Id :

140A

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Package :

Tube

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-264AA (IXFK)

Rise Time :

30ns

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Elements :

1

Mounting Style :

Through Hole

Resistance :

24mOhm

Mounting Type :

Through Hole

Fall Time (Typ) :

20 ns

JESD-609 Code :

e1

Continuous Drain Current (ID) :

140A

FET Feature :

--

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

300 V

FET Type :

N-Channel

Lead Free :

Lead Free

Power Dissipation-Max :

1040W Tc

Manufacturer :

IXYS

Package / Case :

TO-264-3, TO-264AA

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.04kW

Number of Pins :

3

Radiation Hardening :

No

Product Type :

MOSFET

Configuration :

Single

Vgs (Max) :

±20V

Height :

26.59 mm

Product Category :

MOSFET

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-264AA