IXFK140N30P
- Mfr.Part #
- IXFK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264AA
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 300V
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 140 A
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- MSL :
- -
- Series :
- HiPerFET™, PolarP2™
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 100 ns
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Width :
- 5.31 mm
- Drain-source On Resistance-Max :
- 0.024 Ω
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 140A
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Height :
- 26.59 mm
- Supplier Device Package :
- TO-264AA (IXFK)
- Mount :
- Through Hole
- Terminal Position :
- Single
- Channel Type :
- N Channel
- Threshold Voltage :
- 5V
- Brand :
- IXYS
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 1040W (Tc)
- Qualification :
- -
- Product Category :
- MOSFET
- Published :
- 2006
- DS Breakdown Voltage-Min :
- 300 V
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 1040W Tc
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 1040 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current Id :
- 140A
- Base Product Number :
- IXFK140
- Drain to Source Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Power Dissipation :
- 1.04kW
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 20 ns
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Length :
- 20.29 mm
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 30ns
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Product Type :
- MOSFET
- Resistance :
- 24mOhm
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Element Configuration :
- Single
- Datasheets
- IXFK140N30P
IXFK140N30P Documents

N-Channel Tube 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXFK140N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 140A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 140 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK140N30P Applications
There are a lot of IXYS
IXFK140N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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