IXFK120N25P

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Mfr.Part #
IXFK120N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
9,734
In Stock :
9,734

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
300A
Channel Mode :
Enhancement
Case Connection :
DRAIN
Number of Channels :
1 Channel
Max Operating Temperature :
175 °C
Min Operating Temperature :
-55 °C
Base Product Number :
IXFK120
Width :
5.13 mm
Maximum Operating Temperature :
+ 175 C
Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-264AA
Rds On Max :
24 mΩ
Power Dissipation (Max) :
700W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation :
700W
FET Feature :
-
Height :
26.16 mm
Number of Elements :
1
Surface Mount :
No
Qualification Status :
Not Qualified
Product Category :
MOSFET
Package :
Tube
Vgs (Max) :
±20V
Terminal Position :
Single
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
250V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Element Configuration :
Single
Rise Time :
33ns
Input Capacitance :
8 nF
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.024Ohm
Package / Case :
TO-264-3, TO-264AA
Continuous Drain Current (ID) :
120A
Product Status :
Active
Drain to Source Resistance :
24 mΩ
Drain Current-Max (Abs) (ID) :
120 A
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
2500 mJ
Published :
2006
Mount :
Through Hole
Series :
PolarHT™ HiPerFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Fall Time (Typ) :
33 ns
Factory Lead Time :
30 Weeks
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
RoHS :
Details
Mounting Type :
Through Hole
Turn-Off Delay Time :
130 ns
FET Type :
N-Channel
Radiation Hardening :
No
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
250V
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 4mA
Power Dissipation-Max :
700W Tc
Length :
19.96 mm
Pbfree Code :
yes
JESD-609 Code :
e1
Power Dissipation-Max (Abs) :
700 W
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
250 V
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
Through Hole
Brand :
IXYS
Max Power Dissipation :
700 W
Package Shape :
RECTANGULAR
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-264AA (IXFK)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Reach Compliance Code :
Compliant
Datasheets
IXFK120N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, IXFK120N25P pinout, IXFK120N25P datasheet PDF, IXFK120N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25P


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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