IXFK120N25P

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Mfr.Part #
IXFK120N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
9,734
In Stock :
9,734

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
700W Tc
Drain to Source Voltage (Vdss) :
250V
Min Operating Temperature :
-55 °C
Power Dissipation-Max (Abs) :
700 W
Terminal Position :
Single
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
300A
Fall Time (Typ) :
33 ns
Published :
2006
Width :
5.13 mm
Base Product Number :
IXFK120
Drain to Source Breakdown Voltage :
250V
Rds On Max :
24 mΩ
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Pbfree Code :
yes
Tradename :
HiPerFET
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Surface Mount :
No
Channel Mode :
Enhancement
Number of Elements :
1
Number of Terminals :
3
Transistor Element Material :
SILICON
Mount :
Through Hole
Maximum Operating Temperature :
+ 175 C
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Avalanche Energy Rating (Eas) :
2500 mJ
FET Feature :
-
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Through Hole
Turn-Off Delay Time :
130 ns
Vgs (Max) :
±20V
JESD-609 Code :
e1
Terminal Form :
THROUGH-HOLE
Max Power Dissipation :
700 W
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Drain to Source Resistance :
24 mΩ
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.024Ohm
Package / Case :
TO-264-3, TO-264AA
Pin Count :
3
Number of Channels :
1 Channel
Max Operating Temperature :
175 °C
Vgs(th) (Max) @ Id :
5V @ 4mA
Power Dissipation (Max) :
700W (Tc)
JEDEC-95 Code :
TO-264AA
Qualification Status :
Not Qualified
Series :
PolarHT™ HiPerFET™
Supplier Device Package :
TO-264AA (IXFK)
Height :
26.16 mm
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Length :
19.96 mm
Continuous Drain Current (ID) :
120A
Operating Temperature :
-55°C~175°C TJ
DS Breakdown Voltage-Min :
250 V
Input Capacitance :
8 nF
Number of Terminations :
3
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Product Status :
Active
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Rise Time :
33ns
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Packaging :
Tube
Radiation Hardening :
No
Drain Current-Max (Abs) (ID) :
120 A
Power Dissipation :
700W
Datasheets
IXFK120N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXFK120N25P pinout, IXFK120N25P datasheet PDF, IXFK120N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25P


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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