IXFK120N25P

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Mfr.Part #
IXFK120N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
9,734
In Stock :
9,734

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
120 A
Polarity/Channel Type :
N-Channel
Length :
19.96 mm
Power Dissipation :
700W
Manufacturer :
IXYS
Tradename :
HiPerFET
Power Dissipation (Max) :
700W (Tc)
Drain-source On Resistance-Max :
0.024Ohm
JEDEC-95 Code :
TO-264AA
Packaging :
Tube
Surface Mount :
No
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
120A
Drain to Source Voltage (Vdss) :
250V
Max Power Dissipation :
700 W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
300A
Number of Elements :
1
Rds On Max :
24 mΩ
Width :
5.13 mm
FET Feature :
-
Product Category :
MOSFET
Package Shape :
RECTANGULAR
Terminal Position :
Single
Turn-Off Delay Time :
130 ns
Package / Case :
TO-264-3, TO-264AA
Radiation Hardening :
No
Min Operating Temperature :
-55 °C
RoHS :
Details
Series :
PolarHT™ HiPerFET™
Power Dissipation-Max :
700W Tc
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
Element Configuration :
Single
Case Connection :
DRAIN
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Product Status :
Active
Power Dissipation-Max (Abs) :
700 W
Vgs(th) (Max) @ Id :
5V @ 4mA
Max Operating Temperature :
175 °C
DS Breakdown Voltage-Min :
250 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
33 ns
Drain to Source Resistance :
24 mΩ
Supplier Device Package :
TO-264AA (IXFK)
Transistor Type :
1 N-Channel
Published :
2006
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Brand :
IXYS
Base Product Number :
IXFK120
Mount :
Through Hole
Mounting Style :
Through Hole
Product Type :
MOSFET
Configuration :
Single
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Channel Mode :
Enhancement
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
8 nF
Operating Temperature :
-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Factory Lead Time :
30 Weeks
Maximum Operating Temperature :
+ 175 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
33ns
Height :
26.16 mm
Current - Continuous Drain (Id) @ 25°C :
120A Tc
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
2500 mJ
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
250V
JESD-609 Code :
e1
Transistor Polarity :
N-Channel
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFK120N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFK120N25P pinout, IXFK120N25P datasheet PDF, IXFK120N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25P


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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