IXFK120N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.13 mm

Rds On Max :

24 mΩ

Operating Temperature :

-55°C~175°C TJ

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 175 C

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

-

Length :

19.96 mm

Number of Terminations :

3

Turn-Off Delay Time :

130 ns

Packaging :

Tube

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.024Ohm

Height :

26.16 mm

Product Category :

MOSFET

Product Status :

Active

Max Power Dissipation :

700 W

Pulsed Drain Current-Max (IDM) :

300A

JESD-609 Code :

e1

Continuous Drain Current (ID) :

120A

Package :

Tube

Supplier Device Package :

TO-264AA (IXFK)

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

RoHS :

Details

Terminal Position :

Single

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Channel Mode :

Enhancement

Element Configuration :

Single

Factory Lead Time :

30 Weeks

Drain to Source Voltage (Vdss) :

250V

Mounting Type :

Through Hole

Base Product Number :

IXFK120

JEDEC-95 Code :

TO-264AA

Reach Compliance Code :

Compliant

Series :

PolarHT™ HiPerFET™

DS Breakdown Voltage-Min :

250 V

Drain Current-Max (Abs) (ID) :

120 A

Drain to Source Resistance :

24 mΩ

Power Dissipation-Max :

700W Tc

Number of Channels :

1 Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

2500 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max (Abs) :

700 W

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminals :

3

Power Dissipation :

700W

Tradename :

HiPerFET

Power Dissipation (Max) :

700W (Tc)

Rise Time :

33ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Radiation Hardening :

No

Published :

2006

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Pin Count :

3

Max Operating Temperature :

175 °C

Fall Time (Typ) :

33 ns

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Drain to Source Breakdown Voltage :

250V

Vgs(th) (Max) @ Id :

5V @ 4mA

Input Capacitance :

8 nF