IXFK120N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

300A

Channel Mode :

Enhancement

Case Connection :

DRAIN

Number of Channels :

1 Channel

Max Operating Temperature :

175 °C

Min Operating Temperature :

-55 °C

Base Product Number :

IXFK120

Width :

5.13 mm

Maximum Operating Temperature :

+ 175 C

Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-264AA

Rds On Max :

24 mΩ

Power Dissipation (Max) :

700W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Number of Terminals :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

700W

FET Feature :

-

Height :

26.16 mm

Number of Elements :

1

Surface Mount :

No

Qualification Status :

Not Qualified

Product Category :

MOSFET

Package :

Tube

Vgs (Max) :

±20V

Terminal Position :

Single

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

250V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Transistor Type :

1 N-Channel

Element Configuration :

Single

Rise Time :

33ns

Input Capacitance :

8 nF

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.024Ohm

Package / Case :

TO-264-3, TO-264AA

Continuous Drain Current (ID) :

120A

Product Status :

Active

Drain to Source Resistance :

24 mΩ

Drain Current-Max (Abs) (ID) :

120 A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

2500 mJ

Published :

2006

Mount :

Through Hole

Series :

PolarHT™ HiPerFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

MOSFET

Fall Time (Typ) :

33 ns

Factory Lead Time :

30 Weeks

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

RoHS :

Details

Mounting Type :

Through Hole

Turn-Off Delay Time :

130 ns

FET Type :

N-Channel

Radiation Hardening :

No

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

250V

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation-Max :

700W Tc

Length :

19.96 mm

Pbfree Code :

yes

JESD-609 Code :

e1

Power Dissipation-Max (Abs) :

700 W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

250 V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Brand :

IXYS

Max Power Dissipation :

700 W

Package Shape :

RECTANGULAR

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-264AA (IXFK)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Reach Compliance Code :

Compliant