IXFK120N25P

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Mfr.Part #
IXFK120N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
9,734
In Stock :
9,734

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 175 C
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
120 A
Height :
26.16 mm
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Pbfree Code :
yes
Manufacturer :
IXYS
Mounting Type :
Through Hole
Turn-Off Delay Time :
130 ns
Base Product Number :
IXFK120
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Power Dissipation-Max :
700W Tc
Rise Time :
33ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
700W (Tc)
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Drain to Source Resistance :
24 mΩ
JESD-609 Code :
e1
Vgs (Max) :
±20V
Fall Time (Typ) :
33 ns
RoHS :
Details
Pin Count :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Power Dissipation-Max (Abs) :
700 W
ECCN Code :
EAR99
Mount :
Through Hole
Series :
PolarHT™ HiPerFET™
Product Category :
MOSFET
Configuration :
Single
Max Operating Temperature :
175 °C
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-264AA
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
250 V
Case Connection :
DRAIN
Factory Lead Time :
30 Weeks
Rds On Max :
24 mΩ
FET Type :
N-Channel
Continuous Drain Current (ID) :
120A
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
2500 mJ
Tradename :
HiPerFET
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.024Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
-
Supplier Device Package :
TO-264AA (IXFK)
Published :
2006
Length :
19.96 mm
Brand :
IXYS
Radiation Hardening :
No
Packaging :
Tube
Drain to Source Voltage (Vdss) :
250V
Package :
Tube
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Input Capacitance :
8 nF
Transistor Application :
SWITCHING
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
700 W
Drain to Source Breakdown Voltage :
250V
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Width :
5.13 mm
Element Configuration :
Single
Product Status :
Active
Transistor Type :
1 N-Channel
Package / Case :
TO-264-3, TO-264AA
Min Operating Temperature :
-55 °C
Number of Elements :
1
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
300A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Power Dissipation :
700W
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5V @ 4mA
Minimum Operating Temperature :
- 55 C
Datasheets
IXFK120N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, IXFK120N25P pinout, IXFK120N25P datasheet PDF, IXFK120N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25P


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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