IXFK120N20P

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Mfr.Part #
IXFK120N20P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO264AA
Stock
1,070
In Stock :
1,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2010
Transistor Type :
1 N-Channel
JEDEC-95 Code :
TO-264AA
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
714W (Tc)
Power Dissipation-Max :
714W Tc
Power Dissipation-Max (Abs) :
714 W
Width :
5.13 mm
Mounting Type :
Through Hole
Supplier Device Package :
TO-264AA (IXFK)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
100 ns
Reach Compliance Code :
Compliant
Packaging :
Bulk
Brand :
IXYS
Number of Terminations :
3
Product Type :
MOSFET
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
30 Weeks
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
200 V
Case Connection :
DRAIN
Configuration :
Single
Power Dissipation :
714W
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Drain to Source Breakdown Voltage :
200V
Rise Time :
35ns
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Transistor Element Material :
SILICON
Element Configuration :
Single
Terminal Position :
Single
Package :
Bulk
Drain-source On Resistance-Max :
0.022Ohm
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 175 C
Avalanche Energy Rating (Eas) :
2000 mJ
Drain to Source Voltage (Vdss) :
200V
Fall Time (Typ) :
31 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
JESD-609 Code :
e1
Vgs(th) (Max) @ Id :
5V @ 4mA
Tradename :
HiPerFET
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
300A
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Length :
19.96 mm
RoHS Status :
ROHS3 Compliant
Type :
PolarHT HiPerFET Power MOSFET
Product Category :
MOSFET
FET Feature :
--
Channel Mode :
Enhancement
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™, PolarP2™
Continuous Drain Current (ID) :
120A
Mounting Style :
Through Hole
Base Product Number :
IXFK120
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Height :
26.16 mm
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
120 A
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
ECCN Code :
EAR99
Datasheets
IXFK120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Type:PolarHT HiPerFET Power MOSFET, Number of Channels:1 Channel, IXFK120N20P pinout, IXFK120N20P datasheet PDF, IXFK120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N20P


N-Channel Bulk 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA

IXFK120N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 120 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)


IXFK120N20P Applications


There are a lot of IXYS
IXFK120N20P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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