IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Series :
- PolarHT™ HiPerFET™
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 300V
- Base Product Number :
- IXFK102
- Brand :
- IXYS
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 300 V
- Package :
- Bulk
- Turn-Off Delay Time :
- 130 ns
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 250A
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Type :
- PolarHT HiPerFET Power MOSFET
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Factory Lead Time :
- 20 Weeks
- ECCN Code :
- EAR99
- Power Dissipation :
- 700W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 700W Tc
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 26.16 mm
- Fall Time (Typ) :
- 30 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 300V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-264AA (IXFK)
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.033Ohm
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Subcategory :
- MOSFETs
- Published :
- 2006
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 102A
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 700W (Tc)
- Rise Time :
- 28ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Width :
- 5.13 mm
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Length :
- 19.96 mm
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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