IXFK102N30P

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Mfr.Part #
IXFK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264AA
Stock
39
In Stock :
39

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
30 ns
Pbfree Code :
yes
Channel Mode :
Enhancement
Type :
PolarHT HiPerFET Power MOSFET
Transistor Application :
SWITCHING
Pin Count :
3
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Series :
PolarHT™ HiPerFET™
DS Breakdown Voltage-Min :
300 V
Transistor Type :
1 N-Channel
Package / Case :
TO-264-3, TO-264AA
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
130 ns
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Bulk
Avalanche Energy Rating (Eas) :
2500 mJ
Pulsed Drain Current-Max (IDM) :
250A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
700W Tc
Transistor Polarity :
N-Channel
Product Status :
Active
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-264AA (IXFK)
Tradename :
HiPerFET
Number of Terminations :
3
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-264AA
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Mount :
Through Hole
JESD-609 Code :
e1
Continuous Drain Current (ID) :
102A
Vgs(th) (Max) @ Id :
5V @ 4mA
Drain-source On Resistance-Max :
0.033Ohm
Configuration :
Single
Manufacturer :
IXYS
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Number of Terminals :
3
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
300V
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Drain to Source Breakdown Voltage :
300V
Rise Time :
28ns
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Case Connection :
DRAIN
Power Dissipation :
700W
Factory Lead Time :
20 Weeks
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
700W (Tc)
Surface Mount :
No
Number of Elements :
1
Width :
5.13 mm
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Details
Length :
19.96 mm
Base Product Number :
IXFK102
Height :
26.16 mm
Terminal Position :
Single
Brand :
IXYS
Subcategory :
MOSFETs
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Published :
2006
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Datasheets
IXFK102N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFK102N30P pinout, IXFK102N30P datasheet PDF, IXFK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK102N30P


N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXFK102N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)


IXFK102N30P Applications


There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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