IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 20 Weeks
- Height :
- 26.16 mm
- Turn-Off Delay Time :
- 130 ns
- Type :
- PolarHT HiPerFET Power MOSFET
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Length :
- 19.96 mm
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Fall Time (Typ) :
- 30 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Tradename :
- HiPerFET
- Drain to Source Voltage (Vdss) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Drain-source On Resistance-Max :
- 0.033Ohm
- Number of Terminations :
- 3
- Brand :
- IXYS
- Packaging :
- Bulk
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 102A
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 28ns
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 300V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-264-3, TO-264AA
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFK102
- FET Feature :
- --
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-264AA
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Power Dissipation-Max :
- 700W Tc
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 250A
- Width :
- 5.13 mm
- Number of Elements :
- 1
- Supplier Device Package :
- TO-264AA (IXFK)
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Power Dissipation :
- 700W
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 700W (Tc)
- Series :
- PolarHT™ HiPerFET™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 300 V
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Package :
- Bulk
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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