IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 130 ns
- Product Status :
- Active
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 700W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFK102
- Maximum Operating Temperature :
- + 150 C
- Series :
- PolarHT™ HiPerFET™
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 102A
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 300V
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Package :
- Bulk
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- RoHS :
- Details
- Case Connection :
- DRAIN
- Packaging :
- Bulk
- Terminal Form :
- THROUGH-HOLE
- Type :
- PolarHT HiPerFET Power MOSFET
- Pbfree Code :
- yes
- Height :
- 26.16 mm
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 700W Tc
- Mount :
- Through Hole
- Fall Time (Typ) :
- 30 ns
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 300V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Type :
- MOSFET
- Power Dissipation :
- 700W
- Subcategory :
- MOSFETs
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 250A
- Rise Time :
- 28ns
- JEDEC-95 Code :
- TO-264AA
- Width :
- 5.13 mm
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 300 V
- Published :
- 2006
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain-source On Resistance-Max :
- 0.033Ohm
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Channel Mode :
- Enhancement
- Length :
- 19.96 mm
- Minimum Operating Temperature :
- - 55 C
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Factory Lead Time :
- 20 Weeks
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e1
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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