IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 19.96 mm
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 300V
- DS Breakdown Voltage-Min :
- 300 V
- Width :
- 5.13 mm
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 700W (Tc)
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.033Ohm
- Package / Case :
- TO-264-3, TO-264AA
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 130 ns
- Additional Feature :
- AVALANCHE RATED
- Package :
- Bulk
- Case Connection :
- DRAIN
- JESD-609 Code :
- e1
- Type :
- PolarHT HiPerFET Power MOSFET
- Mount :
- Through Hole
- Rise Time :
- 28ns
- Drain to Source Breakdown Voltage :
- 300V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Status :
- Active
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 700W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- 1 N-Channel
- ECCN Code :
- EAR99
- Subcategory :
- MOSFETs
- Packaging :
- Bulk
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 20 Weeks
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Product Category :
- MOSFET
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-264AA (IXFK)
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 30 ns
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Published :
- 2006
- JEDEC-95 Code :
- TO-264AA
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- PolarHT™ HiPerFET™
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFK102
- Transistor Application :
- SWITCHING
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Height :
- 26.16 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Power Dissipation :
- 700W
- RoHS :
- Details
- FET Type :
- N-Channel
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 102A
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Number of Terminations :
- 3
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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