IXFK102N30P

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Mfr.Part #
IXFK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264AA
Stock
39
In Stock :
39

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Supplier Device Package :
TO-264AA (IXFK)
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
700W Tc
Polarity/Channel Type :
N-Channel
Factory Lead Time :
20 Weeks
FET Feature :
--
Avalanche Energy Rating (Eas) :
2500 mJ
Package :
Bulk
Number of Channels :
1 Channel
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
700W (Tc)
DS Breakdown Voltage-Min :
300 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.033Ohm
Package / Case :
TO-264-3, TO-264AA
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
30 ns
Drain to Source Breakdown Voltage :
300V
Pulsed Drain Current-Max (IDM) :
250A
Mounting Type :
Through Hole
Mount :
Through Hole
Published :
2006
Configuration :
Single
Number of Terminations :
3
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Series :
PolarHT™ HiPerFET™
Minimum Operating Temperature :
- 55 C
Type :
PolarHT HiPerFET Power MOSFET
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-264AA
Number of Terminals :
3
Length :
19.96 mm
Subcategory :
MOSFETs
Mounting Style :
Through Hole
Terminal Position :
Single
Turn-Off Delay Time :
130 ns
Surface Mount :
No
Number of Elements :
1
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Base Product Number :
IXFK102
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Product Type :
MOSFET
FET Type :
N-Channel
Power Dissipation :
700W
Packaging :
Bulk
Pin Count :
3
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Reach Compliance Code :
Compliant
Height :
26.16 mm
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 N-Channel
Width :
5.13 mm
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
102A
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
300V
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 4mA
Tradename :
HiPerFET
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
JESD-609 Code :
e1
Rise Time :
28ns
Datasheets
IXFK102N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Type:PolarHT HiPerFET Power MOSFET, IXFK102N30P pinout, IXFK102N30P datasheet PDF, IXFK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK102N30P


N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXFK102N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)


IXFK102N30P Applications


There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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