IXFK102N30P

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Mfr.Part #
IXFK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264AA
Stock
39
In Stock :
39

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
Single
Vgs (Max) :
±20V
Pbfree Code :
yes
Number of Terminations :
3
Length :
19.96 mm
Mounting Style :
Through Hole
Type :
PolarHT HiPerFET Power MOSFET
Power Dissipation (Max) :
700W (Tc)
Series :
PolarHT™ HiPerFET™
Pin Count :
3
Width :
5.13 mm
Drain to Source Voltage (Vdss) :
300V
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Factory Lead Time :
20 Weeks
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Packaging :
Bulk
JEDEC-95 Code :
TO-264AA
Height :
26.16 mm
ECCN Code :
EAR99
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 4mA
Current - Continuous Drain (Id) @ 25°C :
102A Tc
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
300 V
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.033Ohm
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Element Configuration :
Single
Power Dissipation :
700W
Number of Channels :
1 Channel
Product Category :
MOSFET
Brand :
IXYS
Turn-Off Delay Time :
130 ns
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Drain to Source Breakdown Voltage :
300V
Package :
Bulk
Number of Elements :
1
RoHS :
Details
Subcategory :
MOSFETs
FET Feature :
--
JESD-609 Code :
e1
Continuous Drain Current (ID) :
102A
Terminal Position :
Single
Reach Compliance Code :
Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package / Case :
TO-264-3, TO-264AA
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
700W Tc
Additional Feature :
AVALANCHE RATED
Published :
2006
Supplier Device Package :
TO-264AA (IXFK)
Mount :
Through Hole
Fall Time (Typ) :
30 ns
Pulsed Drain Current-Max (IDM) :
250A
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
2500 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Rise Time :
28ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Base Product Number :
IXFK102
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Datasheets
IXFK102N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK102N30P pinout, IXFK102N30P datasheet PDF, IXFK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK102N30P


N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXFK102N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)


IXFK102N30P Applications


There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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