IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Type :
- PolarHT HiPerFET Power MOSFET
- Power Dissipation (Max) :
- 700W (Tc)
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 300V
- Tradename :
- HiPerFET
- Published :
- 2006
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 30 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Width :
- 5.13 mm
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 102A
- Number of Elements :
- 1
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Pbfree Code :
- yes
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-264-3, TO-264AA
- Drain-source On Resistance-Max :
- 0.033Ohm
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Length :
- 19.96 mm
- Height :
- 26.16 mm
- Additional Feature :
- AVALANCHE RATED
- Package :
- Bulk
- Turn-Off Delay Time :
- 130 ns
- Power Dissipation :
- 700W
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 250A
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 28ns
- Drain to Source Breakdown Voltage :
- 300V
- Factory Lead Time :
- 20 Weeks
- Surface Mount :
- No
- Power Dissipation-Max :
- 700W Tc
- Series :
- PolarHT™ HiPerFET™
- Configuration :
- Single
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- DS Breakdown Voltage-Min :
- 300 V
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Base Product Number :
- IXFK102
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-264AA
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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