IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Type :
- PolarHT HiPerFET Power MOSFET
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 700W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Element Configuration :
- Single
- Length :
- 19.96 mm
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- JEDEC-95 Code :
- TO-264AA
- Supplier Device Package :
- TO-264AA (IXFK)
- Factory Lead Time :
- 20 Weeks
- Product Status :
- Active
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- ECCN Code :
- EAR99
- Tradename :
- HiPerFET
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Subcategory :
- MOSFETs
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- PolarHT™ HiPerFET™
- Package / Case :
- TO-264-3, TO-264AA
- JESD-609 Code :
- e1
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 130 ns
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 250A
- Base Product Number :
- IXFK102
- Power Dissipation-Max :
- 700W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 30 ns
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Package :
- Bulk
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Height :
- 26.16 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 5.13 mm
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drain to Source Breakdown Voltage :
- 300V
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 102A
- Rise Time :
- 28ns
- Drain to Source Voltage (Vdss) :
- 300V
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 300 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 700W
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.033Ohm
- Datasheets
- IXFK102N30P
IXFK102N30P Documents

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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