IXFK102N30P

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Mfr.Part #
IXFK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264AA
Stock
39
In Stock :
39

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
20 Weeks
Height :
26.16 mm
Turn-Off Delay Time :
130 ns
Type :
PolarHT HiPerFET Power MOSFET
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Length :
19.96 mm
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Fall Time (Typ) :
30 ns
Vgs(th) (Max) @ Id :
5V @ 4mA
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Drain-source On Resistance-Max :
0.033Ohm
Number of Terminations :
3
Brand :
IXYS
Packaging :
Bulk
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Subcategory :
MOSFETs
Configuration :
Single
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
102A
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Rise Time :
28ns
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
300V
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2006
Qualification Status :
Not Qualified
Package / Case :
TO-264-3, TO-264AA
Package Shape :
RECTANGULAR
Base Product Number :
IXFK102
FET Feature :
--
Mount :
Through Hole
JESD-609 Code :
e1
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-264AA
Transistor Element Material :
SILICON
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Power Dissipation-Max :
700W Tc
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
250A
Width :
5.13 mm
Number of Elements :
1
Supplier Device Package :
TO-264AA (IXFK)
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Power Dissipation :
700W
Pbfree Code :
yes
Power Dissipation (Max) :
700W (Tc)
Series :
PolarHT™ HiPerFET™
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
RoHS :
Details
DS Breakdown Voltage-Min :
300 V
JESD-30 Code :
R-PSFM-T3
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
FET Type :
N-Channel
Package :
Bulk
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Datasheets
IXFK102N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, IXFK102N30P pinout, IXFK102N30P datasheet PDF, IXFK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK102N30P


N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXFK102N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)


IXFK102N30P Applications


There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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