IXFK102N30P

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Mfr.Part #
IXFK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264AA
Stock
39
In Stock :
39

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Qualification Status :
Not Qualified
Series :
PolarHT™ HiPerFET™
Transistor Element Material :
SILICON
Packaging :
Bulk
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
300V
Base Product Number :
IXFK102
Brand :
IXYS
FET Type :
N-Channel
DS Breakdown Voltage-Min :
300 V
Package :
Bulk
Turn-Off Delay Time :
130 ns
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
250A
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Type :
PolarHT HiPerFET Power MOSFET
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Factory Lead Time :
20 Weeks
ECCN Code :
EAR99
Power Dissipation :
700W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Package / Case :
TO-264-3, TO-264AA
RoHS :
Details
Transistor Type :
1 N-Channel
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max :
700W Tc
Avalanche Energy Rating (Eas) :
2500 mJ
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Gate to Source Voltage (Vgs) :
20V
Height :
26.16 mm
Fall Time (Typ) :
30 ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
300V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5V @ 4mA
Manufacturer :
IXYS
Number of Terminations :
3
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e1
Case Connection :
DRAIN
Supplier Device Package :
TO-264AA (IXFK)
Configuration :
Single
Reach Compliance Code :
Compliant
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Drain-source On Resistance-Max :
0.033Ohm
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Subcategory :
MOSFETs
Published :
2006
Mount :
Through Hole
Continuous Drain Current (ID) :
102A
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
700W (Tc)
Rise Time :
28ns
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Vgs (Max) :
±20V
Pin Count :
3
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-264AA
Width :
5.13 mm
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Length :
19.96 mm
Datasheets
IXFK102N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT HiPerFET Power MOSFET, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFK102N30P pinout, IXFK102N30P datasheet PDF, IXFK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK102N30P


N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXFK102N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)


IXFK102N30P Applications


There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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