IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 700W Tc
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 20 Weeks
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Package :
- Bulk
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 700W (Tc)
- DS Breakdown Voltage-Min :
- 300 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 0.033Ohm
- Package / Case :
- TO-264-3, TO-264AA
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 30 ns
- Drain to Source Breakdown Voltage :
- 300V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Published :
- 2006
- Configuration :
- Single
- Number of Terminations :
- 3
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Series :
- PolarHT™ HiPerFET™
- Minimum Operating Temperature :
- - 55 C
- Type :
- PolarHT HiPerFET Power MOSFET
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-264AA
- Number of Terminals :
- 3
- Length :
- 19.96 mm
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 130 ns
- Surface Mount :
- No
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Base Product Number :
- IXFK102
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Power Dissipation :
- 700W
- Packaging :
- Bulk
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Reach Compliance Code :
- Compliant
- Height :
- 26.16 mm
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Width :
- 5.13 mm
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 102A
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 300V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Tradename :
- HiPerFET
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- JESD-609 Code :
- e1
- Rise Time :
- 28ns
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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