IXFK102N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Terminations :

3

Length :

19.96 mm

Mounting Style :

Through Hole

Type :

PolarHT HiPerFET Power MOSFET

Power Dissipation (Max) :

700W (Tc)

Series :

PolarHT™ HiPerFET™

Pin Count :

3

Width :

5.13 mm

Drain to Source Voltage (Vdss) :

300V

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

JEDEC-95 Code :

TO-264AA

Height :

26.16 mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 4mA

Current - Continuous Drain (Id) @ 25°C :

102A Tc

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

300 V

Manufacturer :

IXYS

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.033Ohm

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Element Configuration :

Single

Power Dissipation :

700W

Number of Channels :

1 Channel

Product Category :

MOSFET

Brand :

IXYS

Turn-Off Delay Time :

130 ns

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Drain to Source Breakdown Voltage :

300V

Package :

Bulk

Number of Elements :

1

RoHS :

Details

Subcategory :

MOSFETs

FET Feature :

--

JESD-609 Code :

e1

Continuous Drain Current (ID) :

102A

Terminal Position :

Single

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-264-3, TO-264AA

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

700W Tc

Additional Feature :

AVALANCHE RATED

Published :

2006

Supplier Device Package :

TO-264AA (IXFK)

Mount :

Through Hole

Fall Time (Typ) :

30 ns

Pulsed Drain Current-Max (IDM) :

250A

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

2500 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

28ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Base Product Number :

IXFK102

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V