IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Category :
- MOSFET
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.033Ohm
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 700W (Tc)
- Rise Time :
- 28ns
- Mount :
- Through Hole
- Tradename :
- HiPerFET
- Height :
- 26.16 mm
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Width :
- 5.13 mm
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Power Dissipation-Max :
- 700W Tc
- Surface Mount :
- No
- Type :
- PolarHT HiPerFET Power MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- JESD-609 Code :
- e1
- JEDEC-95 Code :
- TO-264AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXFK102
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 30 ns
- Transistor Type :
- 1 N-Channel
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 130 ns
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Factory Lead Time :
- 20 Weeks
- Package / Case :
- TO-264-3, TO-264AA
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Qualification Status :
- Not Qualified
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Length :
- 19.96 mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 102A
- Series :
- PolarHT™ HiPerFET™
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 300V
- Terminal Position :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 300 V
- Power Dissipation :
- 700W
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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