IXFK102N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Brand :

IXYS

Power Dissipation-Max :

700W Tc

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Bulk

Product Status :

Active

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

300V

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

10V

Type :

PolarHT HiPerFET Power MOSFET

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Supplier Device Package :

TO-264AA (IXFK)

Drain-source On Resistance-Max :

0.033Ohm

DS Breakdown Voltage-Min :

300 V

JEDEC-95 Code :

TO-264AA

Surface Mount :

No

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Turn-Off Delay Time :

130 ns

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Terminals :

3

Subcategory :

MOSFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PolarHT™ HiPerFET™

Power Dissipation :

700W

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 4mA

Packaging :

Bulk

ECCN Code :

EAR99

Mount :

Through Hole

FET Feature :

--

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

250A

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V

Width :

5.13 mm

Terminal Position :

Single

Number of Terminations :

3

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Base Product Number :

IXFK102

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Rise Time :

28ns

Element Configuration :

Single

Continuous Drain Current (ID) :

102A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Length :

19.96 mm

Package / Case :

TO-264-3, TO-264AA

Height :

26.16 mm

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

300V

Power Dissipation (Max) :

700W (Tc)

Mounting Style :

Through Hole

Pbfree Code :

yes