IXFK102N30P
- Mfr.Part #
- IXFK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264AA
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-264AA
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- FET Feature :
- --
- ECCN Code :
- EAR99
- Subcategory :
- MOSFETs
- Power Dissipation :
- 700W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Active
- Mount :
- Through Hole
- Factory Lead Time :
- 20 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Configuration :
- Single
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 300 V
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain to Source Breakdown Voltage :
- 300V
- RoHS :
- Details
- Type :
- PolarHT HiPerFET Power MOSFET
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Published :
- 2006
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 700W (Tc)
- Width :
- 5.13 mm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 130 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 700W Tc
- Number of Elements :
- 1
- Package :
- Bulk
- Qualification Status :
- Not Qualified
- Tradename :
- HiPerFET
- Base Product Number :
- IXFK102
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Rise Time :
- 28ns
- Drain-source On Resistance-Max :
- 0.033Ohm
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Height :
- 26.16 mm
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-264AA (IXFK)
- Continuous Drain Current (ID) :
- 102A
- Vgs (Max) :
- ±20V
- Series :
- PolarHT™ HiPerFET™
- Fall Time (Typ) :
- 30 ns
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Length :
- 19.96 mm
- Packaging :
- Bulk
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 250A
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Application :
- SWITCHING
- Datasheets
- IXFK102N30P

N-Channel Bulk 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXFK102N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a 300V drain to source voltage (Vdss)
IXFK102N30P Applications
There are a lot of IXYS
IXFK102N30P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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