IXFK14N100Q
- Mfr.Part #
- IXFK14N100Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 14A TO264AA
- Stock
- 38,954
- In Stock :
- 38,954
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 360W Tc
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Base Product Number :
- IXFK14
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 14A
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 7A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.75Ohm
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Packaging :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Manufacturer :
- IXYS Corporation
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation (Max) :
- 360W (Tc)
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 1000V
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 56A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Number of Terminations :
- 3
- FET Feature :
- --
- Pin Count :
- 3
- Terminal Position :
- Single
- Series :
- HiPerFET™
- Package :
- Tube
- Supplier Device Package :
- TO-264AA (IXFK)
- Qualification Status :
- Not Qualified
- Datasheets
- IXFK14N100Q
N-Channel Tube 750m Ω @ 7A, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA
IXFK14N100Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 14A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 56A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK14N100Q Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)
IXFK14N100Q Applications
There are a lot of IXYS
IXFK14N100Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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