IXFK14N100Q
- Mfr.Part #
- IXFK14N100Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 14A TO264AA
- Stock
- 38,954
- In Stock :
- 38,954
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 56A
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 360W (Tc)
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-264AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 7A, 10V
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 1000V
- Power Dissipation-Max :
- 360W Tc
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.75Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXFK14
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 14A
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Product Status :
- Obsolete
- Package :
- Tube
- Datasheets
- IXFK14N100Q
N-Channel Tube 750m Ω @ 7A, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA
IXFK14N100Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 14A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 56A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK14N100Q Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)
IXFK14N100Q Applications
There are a lot of IXYS
IXFK14N100Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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