IXFK100N25

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Mfr.Part #
IXFK100N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO264AA
Stock
48,939
In Stock :
48,939

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Avalanche Energy Rating (Eas) :
3000 mJ
Vgs(th) (Max) @ Id :
4V @ 8mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Element Configuration :
Single
Mount :
Through Hole
Power Dissipation-Max (Abs) :
560 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
250V
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
400A
DS Breakdown Voltage-Min :
250 V
Package / Case :
TO-264-3, TO-264AA
Packaging :
Tube
Continuous Drain Current (ID) :
100A
Number of Pins :
3
Drain to Source Breakdown Voltage :
250V
Package :
Tube
Turn-Off Delay Time :
110 ns
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
100 A
Surface Mount :
No
Terminal Position :
Single
Supplier Device Package :
TO-264AA (IXFK)
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™
Base Product Number :
IXFK100
FET Type :
N-Channel
FET Feature :
--
Manufacturer :
IXYS Corporation
Published :
2001
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
560W (Tc)
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
560W Tc
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
JEDEC-95 Code :
TO-264
Pin Count :
3
Case Connection :
DRAIN
Rise Time :
55ns
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.027Ohm
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Power Dissipation :
560W
Vgs (Max) :
±20V
Factory Lead Time :
8 Weeks
Fall Time (Typ) :
40 ns
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 10V
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Datasheets
IXFK100N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N25 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, IXFK100N25 pinout, IXFK100N25 datasheet PDF, IXFK100N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N25


N-Channel Tube 27m Ω @ 50A, 10V ±20V 9100pF @ 25V 300nC @ 10V 250V TO-264-3, TO-264AA

IXFK100N25 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.There is no drain current on this device since the maximum continuous current it can conduct is 100 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 250 V, it should remain above the 250 V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK100N25 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)


IXFK100N25 Applications


There are a lot of IXYS
IXFK100N25 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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