IXFK120N20

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Mfr.Part #
IXFK120N20
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO-264AA
Stock
1,113
In Stock :
1,113

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Category :
MOSFET
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Series :
HiPerFET™, PolarP2™
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
Through Hole
Number of Terminations :
3
JEDEC-95 Code :
TO-264AA
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
200V
Element Configuration :
Single
Power Dissipation :
714W
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Base Product Number :
IXFK120
Tradename :
HiPerFET
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
120 A
Drain-source On Resistance-Max :
0.022Ohm
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Rise Time :
35ns
Transistor Element Material :
SILICON
Number of Terminals :
3
Power Dissipation-Max :
714W Tc
Package :
Bulk
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
2000 mJ
Height :
26.16 mm
Brand :
IXYS
Product Status :
Active
Qualification Status :
Not Qualified
FET Feature :
--
Package / Case :
TO-264-3, TO-264AA
Terminal Position :
Single
Factory Lead Time :
30 Weeks
ECCN Code :
EAR99
Turn-Off Delay Time :
100 ns
JESD-609 Code :
e1
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
FET Type :
N-Channel
Length :
19.96 mm
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
JESD-30 Code :
R-PSFM-T3
Type :
PolarHT HiPerFET Power MOSFET
Drain to Source Voltage (Vdss) :
200V
Mount :
Through Hole
Packaging :
Bulk
Transistor Polarity :
N-Channel
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
300A
Number of Elements :
1
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
120A Tc
DS Breakdown Voltage-Min :
200 V
Transistor Type :
1 N-Channel
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Number of Channels :
1 Channel
Published :
2010
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
120A
Supplier Device Package :
TO-264AA (IXFK)
Polarity/Channel Type :
N-Channel
Width :
5.13 mm
Fall Time (Typ) :
31 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
714W (Tc)
Maximum Operating Temperature :
+ 175 C
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 4mA
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max (Abs) :
714 W
Datasheets
IXFK120N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N20 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Type:PolarHT HiPerFET Power MOSFET, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFK120N20 pinout, IXFK120N20 datasheet PDF, IXFK120N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N20


N-Channel Bulk 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA

IXFK120N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 120 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)


IXFK120N20P Applications


There are a lot of IXYS
IXFK120N20P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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