IXFK120N20
- Mfr.Part #
- IXFK120N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO-264AA
- Stock
- 1,113
- In Stock :
- 1,113
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 714W (Tc)
- Power Dissipation-Max :
- 714W Tc
- Power Dissipation :
- 714W
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 35ns
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 30 Weeks
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Published :
- 2010
- Packaging :
- Bulk
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Fall Time (Typ) :
- 31 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Maximum Operating Temperature :
- + 175 C
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 100 ns
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-264AA
- Type :
- PolarHT HiPerFET Power MOSFET
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 200 V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-264-3, TO-264AA
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Tradename :
- HiPerFET
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 714 W
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.13 mm
- Base Product Number :
- IXFK120
- Drain-source On Resistance-Max :
- 0.022Ohm
- Continuous Drain Current (ID) :
- 120A
- Series :
- HiPerFET™, PolarP2™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Height :
- 26.16 mm
- Length :
- 19.96 mm
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 200V
- Package :
- Bulk
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 300A
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain Current-Max (Abs) (ID) :
- 120 A
- Datasheets
- IXFK120N20

N-Channel Bulk 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA
IXFK120N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 120 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)
IXFK120N20P Applications
There are a lot of IXYS
IXFK120N20P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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