IXFK120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 4mA

Mounting Style :

Through Hole

Rise Time :

35ns

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Base Product Number :

IXFK120

Package Shape :

RECTANGULAR

Height :

26.16 mm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation :

714W

Package / Case :

TO-264-3, TO-264AA

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

0.022Ohm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

300A

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Product Category :

MOSFET

Supplier Device Package :

TO-264AA (IXFK)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

714 W

Product Status :

Active

Packaging :

Bulk

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

120 A

Published :

2010

RoHS :

Details

Series :

HiPerFET™, PolarP2™

FET Type :

N-Channel

JEDEC-95 Code :

TO-264AA

Number of Terminations :

3

Factory Lead Time :

30 Weeks

Transistor Polarity :

N-Channel

Brand :

IXYS

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

2000 mJ

Length :

19.96 mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Manufacturer :

IXYS

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

200V

Number of Channels :

1 Channel

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Power Dissipation-Max :

714W Tc

Power Dissipation (Max) :

714W (Tc)

Width :

5.13 mm

DS Breakdown Voltage-Min :

200 V

Element Configuration :

Single

Maximum Operating Temperature :

+ 175 C

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Package :

Bulk

Fall Time (Typ) :

31 ns

Number of Elements :

1

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

120A

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Type :

PolarHT HiPerFET Power MOSFET

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

200V

JESD-609 Code :

e1