IXFK120N20
- Mfr.Part #
- IXFK120N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO-264AA
- Stock
- 1,113
- In Stock :
- 1,113
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Width :
- 5.13 mm
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- Package :
- Bulk
- Pulsed Drain Current-Max (IDM) :
- 300A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 19.96 mm
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Product Status :
- Active
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.022Ohm
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation-Max (Abs) :
- 714 W
- Drain to Source Voltage (Vdss) :
- 200V
- DS Breakdown Voltage-Min :
- 200 V
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Packaging :
- Bulk
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 120 A
- Mount :
- Through Hole
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 714W
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 714W Tc
- Rise Time :
- 35ns
- Pin Count :
- 3
- Series :
- HiPerFET™, PolarP2™
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Height :
- 26.16 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-264-3, TO-264AA
- Factory Lead Time :
- 30 Weeks
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Base Product Number :
- IXFK120
- JESD-609 Code :
- e1
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Fall Time (Typ) :
- 31 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 100 ns
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 714W (Tc)
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 120A
- Type :
- PolarHT HiPerFET Power MOSFET
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Datasheets
- IXFK120N20

N-Channel Bulk 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA
IXFK120N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 120 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)
IXFK120N20P Applications
There are a lot of IXYS
IXFK120N20P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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