IXFK120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Type :

PolarHT HiPerFET Power MOSFET

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

100 ns

Number of Channels :

1 Channel

Supplier Device Package :

TO-264AA (IXFK)

JEDEC-95 Code :

TO-264AA

Maximum Operating Temperature :

+ 175 C

Published :

2010

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Power Dissipation (Max) :

714W (Tc)

Manufacturer :

IXYS

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Power Dissipation :

714W

Brand :

IXYS

Power Dissipation-Max :

714W Tc

RoHS :

Details

Factory Lead Time :

30 Weeks

Vgs (Max) :

±20V

Package :

Bulk

Vgs(th) (Max) @ Id :

5V @ 4mA

Packaging :

Bulk

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Height :

26.16 mm

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

120 A

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Package / Case :

TO-264-3, TO-264AA

DS Breakdown Voltage-Min :

200 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Fall Time (Typ) :

31 ns

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

2000 mJ

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

120A

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

ECCN Code :

EAR99

Product Category :

MOSFET

Series :

HiPerFET™, PolarP2™

Pulsed Drain Current-Max (IDM) :

300A

Width :

5.13 mm

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Configuration :

Single

FET Feature :

--

Number of Elements :

1

Element Configuration :

Single

Base Product Number :

IXFK120

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.022Ohm

Terminal Position :

Single

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Length :

19.96 mm

Mount :

Through Hole

Power Dissipation-Max (Abs) :

714 W

Rise Time :

35ns