IXFK120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Published :

2010

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

THROUGH-HOLE

Package :

Bulk

Number of Terminals :

3

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

35ns

Mounting Type :

Through Hole

Configuration :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Pulsed Drain Current-Max (IDM) :

300A

Series :

HiPerFET™, PolarP2™

Height :

26.16 mm

Continuous Drain Current (ID) :

120A

Product Type :

MOSFET

JEDEC-95 Code :

TO-264AA

Power Dissipation :

714W

Drain Current-Max (Abs) (ID) :

120 A

FET Feature :

--

Surface Mount :

No

Maximum Operating Temperature :

+ 175 C

RoHS :

Details

Length :

19.96 mm

Number of Elements :

1

Supplier Device Package :

TO-264AA (IXFK)

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 4mA

Element Configuration :

Single

Package Shape :

RECTANGULAR

Brand :

IXYS

Transistor Application :

SWITCHING

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

Single

Factory Lead Time :

30 Weeks

Number of Terminations :

3

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Style :

Through Hole

Base Product Number :

IXFK120

Tradename :

HiPerFET

Type :

PolarHT HiPerFET Power MOSFET

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200 V

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Reach Compliance Code :

Compliant

Power Dissipation-Max :

714W Tc

Power Dissipation-Max (Abs) :

714 W

Avalanche Energy Rating (Eas) :

2000 mJ

Operating Temperature :

-55°C~150°C TJ

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Width :

5.13 mm

Mount :

Through Hole

Turn-Off Delay Time :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Package / Case :

TO-264-3, TO-264AA

Fall Time (Typ) :

31 ns

Packaging :

Bulk

Power Dissipation (Max) :

714W (Tc)

Product Status :

Active

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.022Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Case Connection :

DRAIN