IXFK120N65X2
- Mfr.Part #
- IXFK120N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 120A TO264
- Stock
- 23,721
- In Stock :
- 23,721
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- -55 °C
- Channel Mode :
- Enhancement
- Pin Count :
- 3
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-264
- Number of Elements per Chip :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Manufacturer :
- Littelfuse Inc
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- RoHS :
- Compliant
- Drain to Source Voltage (Vdss) :
- 650V
- Input Capacitance :
- 15.5 nF
- Package Type :
- TO-264P
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 19 Weeks
- Continuous Drain Current Id :
- 120A
- Reach Compliance Code :
- not_compliant
- Maximum Operating Temperature :
- +150 °C
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 60A, 10V
- Transistor Polarity :
- N-Channel
- Drain to Source Resistance :
- 24 mΩ
- Max Operating Temperature :
- 150 °C
- Number of Channels :
- 1 Channel
- Series :
- HiPerFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1250W Tc
- Max Power Dissipation :
- 1.25 kW
- Packaging :
- Tube
- Width :
- 5.3mm
- Length :
- 20.3mm
- Continuous Drain Current (ID) :
- 120A
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Published :
- 2015
- Base Product Number :
- IXFK120
- ECCN Code :
- EAR99
- Min Operating Temperature :
- -55 °C
- Rds On Max :
- 24 mΩ
- Power Dissipation (Max) :
- 1250W (Tc)
- Power Dissipation :
- 1.25kW
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- MSL :
- MSL 1 - Unlimited
- Input Capacitance (Ciss) (Max) @ Vds :
- 15500pF @ 25V
- Height :
- 26.3mm
- Channel Type :
- N Channel
- Qualification :
- -
- Package :
- Tube
- FET Feature :
- --
- Datasheets
- IXFK120N65X2

N-Channel Tube 24m Ω @ 60A, 10V ±30V 15500pF @ 25V 225nC @ 10V 650V TO-264-3, TO-264AA
IXFK120N65X2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 15500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 24 mΩ exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK120N65X2 Features
a continuous drain current (ID) of 120A
single MOSFETs transistor is 24 mΩ
a 650V drain to source voltage (Vdss)
IXFK120N65X2 Applications
There are a lot of IXYS
IXFK120N65X2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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