IXFK100N10

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Mfr.Part #
IXFK100N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 100A TO264AA
Stock
34,498
In Stock :
34,498

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Number of Terminations :
3
Manufacturer :
IXYS
Number of Elements :
1
Power Dissipation :
500W
Package :
Tube
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
100V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Rise Time :
60ns
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Tradename :
HyperFET
RoHS :
Details
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Fall Time (Typ) :
60 ns
Width :
5.13 mm
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 8mA
Transistor Application :
SWITCHING
Series :
HiPerFET™
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Pulsed Drain Current-Max (IDM) :
560A
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Lead Free :
Lead Free
Package / Case :
TO-264-3, TO-264AA
Number of Pins :
3
Radiation Hardening :
No
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Rds On Max :
12 mΩ
Continuous Drain Current (ID) :
100A
Length :
19.96 mm
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
Min Operating Temperature :
-55 °C
Supplier Device Package :
TO-264AA (IXFK)
Resistance :
12mOhm
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Base Product Number :
IXFK100
JEDEC-95 Code :
TO-264AA
Height :
26.16 mm
Product Status :
Active
Power Dissipation-Max (Abs) :
500 W
Power Dissipation (Max) :
500W (Tc)
Power Dissipation Ambient-Max :
500 W
Published :
2000
Number of Terminals :
3
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Pin Count :
3
Vgs (Max) :
±20V
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Pbfree Code :
yes
Max Operating Temperature :
150 °C
Drain Current-Max (Abs) (ID) :
100 A
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
100 V
Input Capacitance :
9 nF
Rds On (Max) @ Id, Vgs :
12m Ω @ 75A, 10V
Drain-source On Resistance-Max :
0.012 Ω
FET Type :
N-Channel
Element Configuration :
Single
Max Power Dissipation :
500 W
Mounting Style :
Through Hole
Turn-Off Delay Time :
100 ns
Qualification Status :
Not Qualified
Drain to Source Resistance :
12 mΩ
Power Dissipation-Max :
500W Tc
Polarity/Channel Type :
N-Channel
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
100V
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Datasheets
IXFK100N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK100N10 pinout, IXFK100N10 datasheet PDF, IXFK100N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N10


N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA

IXFK100N10 Overview


A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK100N10 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)


IXFK100N10 Applications


There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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