IXFK100N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

100A

Input Capacitance :

9 nF

Drain to Source Resistance :

12 mΩ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-264AA (IXFK)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

500 W

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn-Off Delay Time :

100 ns

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

500 W

Power Dissipation Ambient-Max :

500 W

Drain-source On Resistance-Max :

0.012 Ω

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Rds On Max :

12 mΩ

Number of Pins :

3

Product Status :

Active

Drain to Source Breakdown Voltage :

100V

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Power Dissipation-Max :

500W Tc

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Element Configuration :

Single

Case Connection :

DRAIN

Pin Count :

3

Lead Free :

Lead Free

Package / Case :

TO-264-3, TO-264AA

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Fall Time (Typ) :

60 ns

Operating Temperature :

-55°C~150°C TJ

Length :

19.96 mm

Pbfree Code :

yes

Min Operating Temperature :

-55 °C

Number of Terminals :

3

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

100 V

Base Product Number :

IXFK100

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.13 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Height :

26.16 mm

Product Category :

MOSFET

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 8mA

Radiation Hardening :

No

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Surface Mount :

No

Series :

HiPerFET™

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Mounting Style :

Through Hole

Resistance :

12mOhm

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Number of Elements :

1

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

60ns

Number of Terminations :

3

FET Type :

N-Channel

Published :

2000

Power Dissipation (Max) :

500W (Tc)

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

100 A

Configuration :

Single

JEDEC-95 Code :

TO-264AA

Transistor Polarity :

N-Channel

Power Dissipation :

500W

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

560A

Tradename :

HyperFET