IXFK100N10

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Mfr.Part #
IXFK100N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 100A TO264AA
Stock
34,498
In Stock :
34,498

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
60ns
Surface Mount :
No
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Number of Elements :
1
Number of Channels :
1 Channel
Power Dissipation Ambient-Max :
500 W
Number of Terminations :
3
Resistance :
12mOhm
Max Power Dissipation :
500 W
Continuous Drain Current (ID) :
100A
Drain-source On Resistance-Max :
0.012 Ω
Power Dissipation (Max) :
500W (Tc)
Element Configuration :
Single
Transistor Polarity :
N-Channel
Tradename :
HyperFET
Input Capacitance :
9 nF
Width :
5.13 mm
Drain Current-Max (Abs) (ID) :
100 A
Height :
26.16 mm
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
100 ns
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Series :
HiPerFET™
Mounting Style :
Through Hole
Terminal Position :
Single
Package / Case :
TO-264-3, TO-264AA
Vgs(th) (Max) @ Id :
4V @ 8mA
Number of Pins :
3
Brand :
IXYS
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Power Dissipation-Max :
500W Tc
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Product Type :
MOSFET
Transistor Element Material :
SILICON
Drain to Source Resistance :
12 mΩ
Mounting Type :
Through Hole
Radiation Hardening :
No
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
500 W
Rds On Max :
12 mΩ
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-264AA (IXFK)
Drain to Source Breakdown Voltage :
100V
Mount :
Through Hole
Transistor Type :
1 N-Channel
Reach Compliance Code :
Compliant
Configuration :
Single
Published :
2000
Max Operating Temperature :
150 °C
Base Product Number :
IXFK100
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
100 V
Package :
Tube
Channel Mode :
Enhancement
FET Type :
N-Channel
Package Shape :
RECTANGULAR
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
100V
Power Dissipation :
500W
RoHS :
Details
Rds On (Max) @ Id, Vgs :
12m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
560A
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
JEDEC-95 Code :
TO-264AA
Fall Time (Typ) :
60 ns
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Length :
19.96 mm
Datasheets
IXFK100N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, IXFK100N10 pinout, IXFK100N10 datasheet PDF, IXFK100N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N10


N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA

IXFK100N10 Overview


A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK100N10 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)


IXFK100N10 Applications


There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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