IXFK100N10

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Mfr.Part #
IXFK100N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 100A TO264AA
Stock
34,498
In Stock :
34,498

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Product Type :
MOSFET
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-264AA (IXFK)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.012 Ω
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
100A
Max Power Dissipation :
500 W
Packaging :
Tube
DS Breakdown Voltage-Min :
100 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
60 ns
Height :
26.16 mm
Series :
HiPerFET™
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
560A
Pin Count :
3
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
100 A
ECCN Code :
EAR99
Product Category :
MOSFET
Length :
19.96 mm
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Rds On Max :
12 mΩ
Drain to Source Resistance :
12 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Base Product Number :
IXFK100
Rds On (Max) @ Id, Vgs :
12m Ω @ 75A, 10V
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Tradename :
HyperFET
Number of Channels :
1 Channel
Min Operating Temperature :
-55 °C
Mounting Type :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
500W (Tc)
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4V @ 8mA
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Max Operating Temperature :
150 °C
JEDEC-95 Code :
TO-264AA
Power Dissipation-Max (Abs) :
500 W
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Turn-Off Delay Time :
100 ns
Input Capacitance :
9 nF
Surface Mount :
No
Package :
Tube
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Power Dissipation :
500W
Power Dissipation Ambient-Max :
500 W
Width :
5.13 mm
Configuration :
Single
Number of Pins :
3
Published :
2000
Resistance :
12mOhm
Lead Free :
Lead Free
Power Dissipation-Max :
500W Tc
Drain to Source Breakdown Voltage :
100V
Mount :
Through Hole
FET Type :
N-Channel
Number of Terminals :
3
Number of Terminations :
3
Vgs (Max) :
±20V
Rise Time :
60ns
Datasheets
IXFK100N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, IXFK100N10 pinout, IXFK100N10 datasheet PDF, IXFK100N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N10


N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA

IXFK100N10 Overview


A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK100N10 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)


IXFK100N10 Applications


There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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