IXFK100N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

100 V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 8mA

Terminal Position :

Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFK100

Packaging :

Tube

Number of Terminations :

3

Drain-source On Resistance-Max :

0.012 Ω

Qualification Status :

Not Qualified

Resistance :

12mOhm

JEDEC-95 Code :

TO-264AA

Rds On Max :

12 mΩ

Product Category :

MOSFET

Mounting Style :

Through Hole

Width :

5.13 mm

Published :

2000

Continuous Drain Current (ID) :

100A

Series :

HiPerFET™

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Pbfree Code :

yes

Drain to Source Resistance :

12 mΩ

Pin Count :

3

Drain Current-Max (Abs) (ID) :

100 A

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-264-3, TO-264AA

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Fall Time (Typ) :

60 ns

Product Type :

MOSFET

Surface Mount :

No

Power Dissipation (Max) :

500W (Tc)

Drain to Source Breakdown Voltage :

100V

Input Capacitance :

9 nF

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Length :

19.96 mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

500W Tc

Power Dissipation-Max (Abs) :

500 W

Pulsed Drain Current-Max (IDM) :

560A

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

100 ns

Height :

26.16 mm

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Supplier Device Package :

TO-264AA (IXFK)

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Element Configuration :

Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Brand :

IXYS

Tradename :

HyperFET

Package Shape :

RECTANGULAR

Power Dissipation :

500W

Power Dissipation Ambient-Max :

500 W

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

FET Feature :

--

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Pins :

3

Radiation Hardening :

No

Transistor Application :

SWITCHING

Max Power Dissipation :

500 W

JESD-30 Code :

R-PSFM-T3

Min Operating Temperature :

-55 °C

Number of Elements :

1

Rise Time :

60ns