IXFK100N10
- Mfr.Part #
- IXFK100N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A TO264AA
- Stock
- 34,498
- In Stock :
- 34,498
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 100A
- Drain to Source Resistance :
- 12 mΩ
- Element Configuration :
- Single
- Power Dissipation Ambient-Max :
- 500 W
- Manufacturer :
- IXYS
- Fall Time (Typ) :
- 60 ns
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Max Power Dissipation :
- 500 W
- Base Product Number :
- IXFK100
- DS Breakdown Voltage-Min :
- 100 V
- Power Dissipation (Max) :
- 500W (Tc)
- Drain Current-Max (Abs) (ID) :
- 100 A
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation-Max :
- 500W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Series :
- HiPerFET™
- Power Dissipation-Max (Abs) :
- 500 W
- Drain to Source Breakdown Voltage :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 560A
- Resistance :
- 12mOhm
- Rise Time :
- 60ns
- Radiation Hardening :
- No
- Tradename :
- HyperFET
- Rds On Max :
- 12 mΩ
- Max Operating Temperature :
- 150 °C
- Width :
- 5.13 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Terminal Position :
- Single
- Published :
- 2000
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance :
- 9 nF
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 100 ns
- Product Status :
- Active
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Mount :
- Through Hole
- Number of Elements :
- 1
- Brand :
- IXYS
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 75A, 10V
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Power Dissipation :
- 500W
- Product Category :
- MOSFET
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Length :
- 19.96 mm
- Height :
- 26.16 mm
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.012 Ω
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Datasheets
- IXFK100N10

N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA
IXFK100N10 Overview
A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK100N10 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)
IXFK100N10 Applications
There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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