IXFK100N10
- Mfr.Part #
- IXFK100N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A TO264AA
- Stock
- 34,498
- In Stock :
- 34,498
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HyperFET
- Product Category :
- MOSFET
- Drain to Source Resistance :
- 12 mΩ
- FET Feature :
- --
- Pbfree Code :
- yes
- Rds On Max :
- 12 mΩ
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Turn-Off Delay Time :
- 100 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Surface Mount :
- No
- RoHS :
- Details
- Package :
- Tube
- Rise Time :
- 60ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Number of Pins :
- 3
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 560A
- Drain-source On Resistance-Max :
- 0.012 Ω
- Brand :
- IXYS
- Max Power Dissipation :
- 500 W
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Compliant
- Width :
- 5.13 mm
- Number of Terminals :
- 3
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 9 nF
- Power Dissipation (Max) :
- 500W (Tc)
- Mounting Style :
- Through Hole
- Resistance :
- 12mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 500W
- Number of Elements :
- 1
- Max Operating Temperature :
- 150 °C
- DS Breakdown Voltage-Min :
- 100 V
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Height :
- 26.16 mm
- Power Dissipation Ambient-Max :
- 500 W
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Fall Time (Typ) :
- 60 ns
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 75A, 10V
- Base Product Number :
- IXFK100
- Drain Current-Max (Abs) (ID) :
- 100 A
- Continuous Drain Current (ID) :
- 100A
- Published :
- 2000
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 500 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 500W Tc
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Length :
- 19.96 mm
- Radiation Hardening :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Qualification Status :
- Not Qualified
- Datasheets
- IXFK100N10

N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA
IXFK100N10 Overview
A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK100N10 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)
IXFK100N10 Applications
There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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