IXFK100N10

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Mfr.Part #
IXFK100N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 100A TO264AA
Stock
34,498
In Stock :
34,498

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Resistance :
12mOhm
Rise Time :
60ns
Power Dissipation Ambient-Max :
500 W
Series :
HiPerFET™
Power Dissipation-Max :
500W Tc
Tradename :
HyperFET
Supplier Device Package :
TO-264AA (IXFK)
Surface Mount :
No
Drain to Source Breakdown Voltage :
100V
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Radiation Hardening :
No
Power Dissipation-Max (Abs) :
500 W
Min Operating Temperature :
-55 °C
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Published :
2000
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Drain to Source Resistance :
12 mΩ
Width :
5.13 mm
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Packaging :
Tube
Length :
19.96 mm
Number of Elements :
1
Brand :
IXYS
Number of Pins :
3
Max Operating Temperature :
150 °C
Mount :
Through Hole
DS Breakdown Voltage-Min :
100 V
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Rds On Max :
12 mΩ
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Package / Case :
TO-264-3, TO-264AA
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
560A
Element Configuration :
Single
Turn-Off Delay Time :
100 ns
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
100V
Base Product Number :
IXFK100
JEDEC-95 Code :
TO-264AA
Power Dissipation :
500W
Vgs(th) (Max) @ Id :
4V @ 8mA
Rds On (Max) @ Id, Vgs :
12m Ω @ 75A, 10V
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Input Capacitance :
9 nF
Terminal Position :
Single
Drain-source On Resistance-Max :
0.012 Ω
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Max Power Dissipation :
500 W
RoHS :
Details
Fall Time (Typ) :
60 ns
Pin Count :
3
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
100 A
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
100A
Height :
26.16 mm
Power Dissipation (Max) :
500W (Tc)
Datasheets
IXFK100N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, IXFK100N10 pinout, IXFK100N10 datasheet PDF, IXFK100N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N10


N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA

IXFK100N10 Overview


A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK100N10 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)


IXFK100N10 Applications


There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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