IXFK100N10
- Mfr.Part #
- IXFK100N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A TO264AA
- Stock
- 34,498
- In Stock :
- 34,498
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-264AA (IXFK)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.012 Ω
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 100A
- Max Power Dissipation :
- 500 W
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 100 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 60 ns
- Height :
- 26.16 mm
- Series :
- HiPerFET™
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 560A
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 100 A
- ECCN Code :
- EAR99
- Product Category :
- MOSFET
- Length :
- 19.96 mm
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Rds On Max :
- 12 mΩ
- Drain to Source Resistance :
- 12 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Base Product Number :
- IXFK100
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 75A, 10V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Tradename :
- HyperFET
- Number of Channels :
- 1 Channel
- Min Operating Temperature :
- -55 °C
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation (Max) :
- 500W (Tc)
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Max Operating Temperature :
- 150 °C
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation-Max (Abs) :
- 500 W
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 100 ns
- Input Capacitance :
- 9 nF
- Surface Mount :
- No
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Power Dissipation :
- 500W
- Power Dissipation Ambient-Max :
- 500 W
- Width :
- 5.13 mm
- Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2000
- Resistance :
- 12mOhm
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 500W Tc
- Drain to Source Breakdown Voltage :
- 100V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Rise Time :
- 60ns
- Datasheets
- IXFK100N10

N-Channel Tube 12m Ω @ 75A, 10V ±20V 9000pF @ 25V 360nC @ 10V 100V TO-264-3, TO-264AA
IXFK100N10 Overview
A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 100 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 560A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK100N10 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 560A.
single MOSFETs transistor is 12 mΩ
a 100V drain to source voltage (Vdss)
IXFK100N10 Applications
There are a lot of IXYS
IXFK100N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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