IXFK100N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

19.96 mm

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

500W Tc

Product Type :

MOSFET

Rise Time :

60ns

JEDEC-95 Code :

TO-264AA

Package :

Tube

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2000

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

100A

Surface Mount :

No

Series :

HiPerFET™

Power Dissipation (Max) :

500W (Tc)

Product Status :

Active

Brand :

IXYS

Package Shape :

RECTANGULAR

Width :

5.13 mm

Mounting Type :

Through Hole

Power Dissipation :

500W

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Terminals :

3

Power Dissipation Ambient-Max :

500 W

Number of Terminations :

3

Supplier Device Package :

TO-264AA (IXFK)

Packaging :

Tube

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Lead Free :

Lead Free

Mounting Style :

Through Hole

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Vgs (Max) :

±20V

Power Dissipation-Max (Abs) :

500 W

Gate to Source Voltage (Vgs) :

20V

Tradename :

HyperFET

Max Power Dissipation :

500 W

DS Breakdown Voltage-Min :

100 V

Height :

26.16 mm

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

12 mΩ

FET Feature :

--

Mount :

Through Hole

Turn-Off Delay Time :

100 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Configuration :

Single

Manufacturer :

IXYS

Base Product Number :

IXFK100

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Min Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

100V

Channel Mode :

Enhancement

FET Type :

N-Channel

Pin Count :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drain to Source Breakdown Voltage :

100V

Pulsed Drain Current-Max (IDM) :

560A

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Input Capacitance :

9 nF

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

100 A

Drain to Source Resistance :

12 mΩ

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.012 Ω

Vgs(th) (Max) @ Id :

4V @ 8mA

RoHS :

Details

Number of Pins :

3

Reach Compliance Code :

Compliant

Resistance :

12mOhm

Fall Time (Typ) :

60 ns