IXFK120N30T
- Mfr.Part #
- IXFK120N30T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 120A TO264AA
- Stock
- 43,233
- In Stock :
- 43,233
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- GigaMOS Power MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Height :
- 26.16 mm
- Series :
- GigaMOS™
- Package :
- Tube
- Base Product Number :
- IXFK120
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- RoHS :
- Compliant
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- Rds On Max :
- 24 mΩ
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 300V
- Product Status :
- Active
- Length :
- 19.96 mm
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Continuous Drain Current (ID) :
- 120A
- Gate Charge (Qg) (Max) @ Vgs :
- 265nC @ 10V
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- Max Power Dissipation :
- 960 W
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 31 ns
- Reach Compliance Code :
- Unknown
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- TIN SILVER COPPER
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-264AA
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation-Max :
- 960W Tc
- Drain to Source Voltage (Vdss) :
- 300V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Transistor Polarity :
- N-Channel
- Width :
- 5.13 mm
- Surface Mount :
- No
- Input Capacitance :
- 20 nF
- Number of Terminals :
- 3
- Drain Current-Max (Abs) (ID) :
- 120 A
- Pulsed Drain Current-Max (IDM) :
- 330A
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 60A, 10V
- Manufacturer :
- IXYS
- Tradename :
- HiPerFET
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 960W (Tc)
- Power Dissipation-Max (Abs) :
- 960 W
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.024Ohm
- Factory Lead Time :
- 30 Weeks
- Published :
- 2009
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Datasheets
- IXFK120N30T

N-Channel Tube 24m Ω @ 60A, 10V ±20V 20000pF @ 25V 265nC @ 10V 300V TO-264-3, TO-264AA
IXFK120N30T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 20000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.120 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 330A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK120N30T Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 330A.
a 300V drain to source voltage (Vdss)
IXFK120N30T Applications
There are a lot of IXYS
IXFK120N30T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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