IXFK110N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Pbfree Code :

yes

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

110 A

Tradename :

HyperFET

DS Breakdown Voltage-Min :

70 V

Power Dissipation Ambient-Max :

500 W

Power Dissipation-Max :

500W Tc

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

110A

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

500W (Tc)

Avalanche Energy Rating (Eas) :

2000 mJ

Mount :

Through Hole

Manufacturer :

IXYS

JEDEC-95 Code :

TO-264AA

Published :

2000

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-264AA (IXFK)

Vgs (Max) :

±20V

Package / Case :

TO-264-3, TO-264AA

Terminal Form :

THROUGH-HOLE

Base Product Number :

IXFK110

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

70V

Product Category :

MOSFET

Turn-Off Delay Time :

100 ns

Power Dissipation-Max (Abs) :

500 W

Product Status :

Not For New Designs

Width :

5.13 mm

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6m Ω @ 55A, 10V

Rise Time :

60ns

Lead Free :

Lead Free

Radiation Hardening :

No

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Current Rating :

110A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Length :

19.96 mm

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Minimum Operating Temperature :

- 55 C

Height :

26.16 mm

Resistance :

6mOhm

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

70V

Fall Time (Typ) :

60 ns

Element Configuration :

Single

Voltage - Rated DC :

70V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 8mA

Pulsed Drain Current-Max (IDM) :

600A

Power Dissipation :

500W

Configuration :

Single

Case Connection :

DRAIN

Number of Terminations :

3

Package :

Tube

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Number of Pins :

3

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.006 Ω

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified