IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Not For New Designs
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Package :
- Tube
- Tradename :
- HyperFET
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 110A
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.006 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Height :
- 26.16 mm
- Supplier Device Package :
- TO-264AA (IXFK)
- Pulsed Drain Current-Max (IDM) :
- 600A
- FET Type :
- N-Channel
- Power Dissipation Ambient-Max :
- 500 W
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 70V
- DS Breakdown Voltage-Min :
- 70 V
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- Resistance :
- 6mOhm
- Continuous Drain Current (ID) :
- 110A
- ECCN Code :
- EAR99
- Package / Case :
- TO-264-3, TO-264AA
- Radiation Hardening :
- No
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Power Dissipation (Max) :
- 500W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFK110
- Turn-Off Delay Time :
- 100 ns
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Drain to Source Voltage (Vdss) :
- 70V
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 110 A
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Length :
- 19.96 mm
- Brand :
- IXYS
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 500W
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Rise Time :
- 60ns
- Voltage - Rated DC :
- 70V
- Number of Elements :
- 1
- Series :
- HiPerFET™
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 8 Weeks
- FET Feature :
- --
- Fall Time (Typ) :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation-Max :
- 500W Tc
- Width :
- 5.13 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 500 W
- Number of Pins :
- 3
- Published :
- 2000
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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