IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
Not Applicable
Reach Compliance Code :
Compliant
Mounting Style :
Through Hole
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Base Product Number :
IXFK110
Transistor Type :
1 N-Channel
Current Rating :
110A
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
100 ns
Length :
19.96 mm
Qualification Status :
Not Qualified
RoHS :
Details
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
70 V
Vgs (Max) :
±20V
Power Dissipation-Max (Abs) :
500 W
Package :
Tube
Voltage - Rated DC :
70V
Factory Lead Time :
8 Weeks
Continuous Drain Current (ID) :
110A
Resistance :
6mOhm
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Power Dissipation Ambient-Max :
500 W
Drain to Source Voltage (Vdss) :
70V
Power Dissipation (Max) :
500W (Tc)
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Brand :
IXYS
Width :
5.13 mm
Drain Current-Max (Abs) (ID) :
110 A
Pulsed Drain Current-Max (IDM) :
600A
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
FET Type :
N-Channel
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Mount :
Through Hole
FET Feature :
--
Package / Case :
TO-264-3, TO-264AA
Vgs(th) (Max) @ Id :
4V @ 8mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Product Status :
Not For New Designs
Channel Mode :
Enhancement
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Product Type :
MOSFET
Element Configuration :
Single
Number of Terminations :
3
Drain-source On Resistance-Max :
0.006 Ω
Packaging :
Tube
Number of Terminals :
3
Published :
2000
Number of Channels :
1 Channel
JESD-30 Code :
R-PSFM-T3
Fall Time (Typ) :
60 ns
Supplier Device Package :
TO-264AA (IXFK)
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Power Dissipation-Max :
500W Tc
Tradename :
HyperFET
Height :
26.16 mm
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Rise Time :
60ns
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
2000 mJ
Maximum Operating Temperature :
+ 150 C
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-264AA
Drain to Source Breakdown Voltage :
70V
Series :
HiPerFET™
Transistor Application :
SWITCHING
Terminal Position :
Single
Power Dissipation :
500W
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Datasheets
IXFK110N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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