IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Resistance :
- 6mOhm
- Width :
- 5.13 mm
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Drain Current-Max (Abs) (ID) :
- 110 A
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 500W Tc
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation Ambient-Max :
- 500 W
- Height :
- 26.16 mm
- Length :
- 19.96 mm
- Fall Time (Typ) :
- 60 ns
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Package / Case :
- TO-264-3, TO-264AA
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max (Abs) :
- 500 W
- Power Dissipation (Max) :
- 500W (Tc)
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Rise Time :
- 60ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-264AA (IXFK)
- Element Configuration :
- Single
- Power Dissipation :
- 500W
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 70 V
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Series :
- HiPerFET™
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- HyperFET
- Number of Terminals :
- 3
- Current Rating :
- 110A
- Base Product Number :
- IXFK110
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.006 Ω
- Drain to Source Breakdown Voltage :
- 70V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Product Status :
- Not For New Designs
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 70V
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 100 ns
- Published :
- 2000
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 70V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 110A
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Pulsed Drain Current-Max (IDM) :
- 600A
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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