IXFK110N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Factory Lead Time :

8 Weeks

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

70V

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.006 Ω

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Power Dissipation (Max) :

500W (Tc)

Height :

26.16 mm

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

600A

Avalanche Energy Rating (Eas) :

2000 mJ

Drain Current-Max (Abs) (ID) :

110 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation :

500W

Tradename :

HyperFET

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel

Length :

19.96 mm

Number of Terminals :

3

DS Breakdown Voltage-Min :

70 V

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFK110

Supplier Device Package :

TO-264AA (IXFK)

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

500 W

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

70V

Pin Count :

3

Power Dissipation-Max :

500W Tc

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Resistance :

6mOhm

Continuous Drain Current (ID) :

110A

Number of Terminations :

3

Channel Mode :

Enhancement

Pbfree Code :

yes

Rise Time :

60ns

Power Dissipation-Max (Abs) :

500 W

Terminal Form :

THROUGH-HOLE

Product Status :

Not For New Designs

Turn-Off Delay Time :

100 ns

Configuration :

Single

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

70V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Width :

5.13 mm

Vgs(th) (Max) @ Id :

4V @ 8mA

Rds On (Max) @ Id, Vgs :

6m Ω @ 55A, 10V

Surface Mount :

No

Package :

Tube

ECCN Code :

EAR99

FET Feature :

--

Number of Elements :

1

Published :

2000

Fall Time (Typ) :

60 ns

Series :

HiPerFET™

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-264AA

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Current Rating :

110A