IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 500W Tc
- Number of Pins :
- 3
- Width :
- 5.13 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 110A
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- FET Feature :
- --
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation Ambient-Max :
- 500 W
- Product Category :
- MOSFET
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 500W (Tc)
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Power Dissipation :
- 500W
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 110 A
- Channel Mode :
- Enhancement
- Series :
- HiPerFET™
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Current Rating :
- 110A
- Base Product Number :
- IXFK110
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Rise Time :
- 60ns
- Factory Lead Time :
- 8 Weeks
- DS Breakdown Voltage-Min :
- 70 V
- Drain to Source Voltage (Vdss) :
- 70V
- Fall Time (Typ) :
- 60 ns
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Pin Count :
- 3
- Manufacturer :
- IXYS
- Length :
- 19.96 mm
- Resistance :
- 6mOhm
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Package :
- Tube
- Configuration :
- Single
- Packaging :
- Tube
- Published :
- 2000
- Mounting Style :
- Through Hole
- Height :
- 26.16 mm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-264AA (IXFK)
- Voltage - Rated DC :
- 70V
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 500 W
- Drain-source On Resistance-Max :
- 0.006 Ω
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Number of Terminations :
- 3
- Tradename :
- HyperFET
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Not For New Designs
- Lead Free :
- Lead Free
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 100 ns
- JEDEC-95 Code :
- TO-264AA
- Pulsed Drain Current-Max (IDM) :
- 600A
- Drain to Source Breakdown Voltage :
- 70V
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFK110N07
IXFK110N07 Documents

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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