IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power Dissipation-Max :
- 500W Tc
- Length :
- 19.96 mm
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain to Source Voltage (Vdss) :
- 70V
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Package :
- Tube
- JEDEC-95 Code :
- TO-264AA
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFK110
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 100 ns
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Packaging :
- Tube
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 70 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2000
- Current Rating :
- 110A
- Pulsed Drain Current-Max (IDM) :
- 600A
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 110A
- Reach Compliance Code :
- Compliant
- Power Dissipation Ambient-Max :
- 500 W
- Drain Current-Max (Abs) (ID) :
- 110 A
- Resistance :
- 6mOhm
- Radiation Hardening :
- No
- Manufacturer :
- IXYS
- Mount :
- Through Hole
- Height :
- 26.16 mm
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Width :
- 5.13 mm
- Drain to Source Breakdown Voltage :
- 70V
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage - Rated DC :
- 70V
- Power Dissipation (Max) :
- 500W (Tc)
- Lead Free :
- Lead Free
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Series :
- HiPerFET™
- Power Dissipation :
- 500W
- Fall Time (Typ) :
- 60 ns
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.006 Ω
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation-Max (Abs) :
- 500 W
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- HyperFET
- Transistor Polarity :
- N-Channel
- Rise Time :
- 60ns
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Not For New Designs
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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