IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Factory Lead Time :
8 Weeks
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Brand :
IXYS
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSFM-T3
Voltage - Rated DC :
70V
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.006 Ω
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Power Dissipation (Max) :
500W (Tc)
Height :
26.16 mm
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
600A
Avalanche Energy Rating (Eas) :
2000 mJ
Drain Current-Max (Abs) (ID) :
110 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
Not Applicable
Power Dissipation :
500W
Tradename :
HyperFET
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Length :
19.96 mm
Number of Terminals :
3
DS Breakdown Voltage-Min :
70 V
Polarity/Channel Type :
N-Channel
Base Product Number :
IXFK110
Supplier Device Package :
TO-264AA (IXFK)
Mounting Type :
Through Hole
Power Dissipation Ambient-Max :
500 W
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
70V
Pin Count :
3
Power Dissipation-Max :
500W Tc
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Resistance :
6mOhm
Continuous Drain Current (ID) :
110A
Number of Terminations :
3
Channel Mode :
Enhancement
Pbfree Code :
yes
Rise Time :
60ns
Power Dissipation-Max (Abs) :
500 W
Terminal Form :
THROUGH-HOLE
Product Status :
Not For New Designs
Turn-Off Delay Time :
100 ns
Configuration :
Single
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
70V
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Width :
5.13 mm
Vgs(th) (Max) @ Id :
4V @ 8mA
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Surface Mount :
No
Package :
Tube
ECCN Code :
EAR99
FET Feature :
--
Number of Elements :
1
Published :
2000
Fall Time (Typ) :
60 ns
Series :
HiPerFET™
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-264AA
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Current Rating :
110A
Datasheets
IXFK110N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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