IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
500W Tc
Number of Pins :
3
Width :
5.13 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
Not Applicable
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Number of Channels :
1 Channel
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Continuous Drain Current (ID) :
110A
Current - Continuous Drain (Id) @ 25°C :
110A Tc
FET Feature :
--
RoHS :
Details
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation Ambient-Max :
500 W
Product Category :
MOSFET
Number of Terminals :
3
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
500W (Tc)
ECCN Code :
EAR99
Product Type :
MOSFET
Power Dissipation :
500W
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Drain Current-Max (Abs) (ID) :
110 A
Channel Mode :
Enhancement
Series :
HiPerFET™
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
FET Type :
N-Channel
Current Rating :
110A
Base Product Number :
IXFK110
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Number of Elements :
1
Rise Time :
60ns
Factory Lead Time :
8 Weeks
DS Breakdown Voltage-Min :
70 V
Drain to Source Voltage (Vdss) :
70V
Fall Time (Typ) :
60 ns
Surface Mount :
No
Package / Case :
TO-264-3, TO-264AA
Pin Count :
3
Manufacturer :
IXYS
Length :
19.96 mm
Resistance :
6mOhm
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Package :
Tube
Configuration :
Single
Packaging :
Tube
Published :
2000
Mounting Style :
Through Hole
Height :
26.16 mm
Radiation Hardening :
No
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 8mA
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-264AA (IXFK)
Voltage - Rated DC :
70V
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
500 W
Drain-source On Resistance-Max :
0.006 Ω
Transistor Polarity :
N-Channel
Brand :
IXYS
Number of Terminations :
3
Tradename :
HyperFET
Additional Feature :
AVALANCHE RATED
Product Status :
Not For New Designs
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
100 ns
JEDEC-95 Code :
TO-264AA
Pulsed Drain Current-Max (IDM) :
600A
Drain to Source Breakdown Voltage :
70V
Reach Compliance Code :
Compliant
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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