IXFK110N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

500W Tc

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Resistance :

6mOhm

Published :

2000

Number of Terminations :

3

Number of Terminals :

3

Product Category :

MOSFET

Pin Count :

3

FET Feature :

--

Voltage - Rated DC :

70V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Surface Mount :

No

Power Dissipation-Max (Abs) :

500 W

Power Dissipation Ambient-Max :

500 W

Product Status :

Not For New Designs

RoHS :

Details

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation (Max) :

500W (Tc)

Drain to Source Breakdown Voltage :

70V

Rds On (Max) @ Id, Vgs :

6m Ω @ 55A, 10V

Brand :

IXYS

Configuration :

Single

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Drain Current-Max (Abs) (ID) :

110 A

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Turn-Off Delay Time :

100 ns

Reach Compliance Code :

Compliant

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

600A

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-264AA

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Package / Case :

TO-264-3, TO-264AA

Length :

19.96 mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-264AA (IXFK)

Rise Time :

60ns

Drain to Source Voltage (Vdss) :

70V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

2000 mJ

DS Breakdown Voltage-Min :

70 V

Width :

5.13 mm

Element Configuration :

Single

Transistor Polarity :

N-Channel

Base Product Number :

IXFK110

Number of Elements :

1

Fall Time (Typ) :

60 ns

Tradename :

HyperFET

RoHS Status :

ROHS3 Compliant

Height :

26.16 mm

Vgs(th) (Max) @ Id :

4V @ 8mA

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Power Dissipation :

500W

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.006 Ω

Radiation Hardening :

No

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Current Rating :

110A

Continuous Drain Current (ID) :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Mount :

Through Hole

Series :

HiPerFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Additional Feature :

AVALANCHE RATED

Package :

Tube

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

Not Applicable

Case Connection :

DRAIN