IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS
Configuration :
Single
Number of Terminals :
3
Current Rating :
110A
Fall Time (Typ) :
60 ns
Qualification Status :
Not Qualified
Power Dissipation-Max :
500W Tc
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
Product Type :
MOSFET
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Product Status :
Not For New Designs
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Radiation Hardening :
No
Number of Elements :
1
Transistor Application :
SWITCHING
Packaging :
Tube
JEDEC-95 Code :
TO-264AA
Base Product Number :
IXFK110
Continuous Drain Current (ID) :
110A
Package :
Tube
Resistance :
6mOhm
Tradename :
HyperFET
Rise Time :
60ns
Number of Channels :
1 Channel
Supplier Device Package :
TO-264AA (IXFK)
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
70 V
Factory Lead Time :
8 Weeks
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.006 Ω
Length :
19.96 mm
Package / Case :
TO-264-3, TO-264AA
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
600A
Drain to Source Voltage (Vdss) :
70V
Turn-Off Delay Time :
100 ns
Power Dissipation Ambient-Max :
500 W
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Power Dissipation :
500W
Series :
HiPerFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
500W (Tc)
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Product Category :
MOSFET
Power Dissipation-Max (Abs) :
500 W
Published :
2000
Lead Free :
Lead Free
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
4V @ 8mA
Height :
26.16 mm
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
110 A
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
RoHS :
Details
Element Configuration :
Single
ECCN Code :
EAR99
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated DC :
70V
Moisture Sensitivity Level (MSL) :
Not Applicable
Pin Count :
3
Width :
5.13 mm
Drain to Source Breakdown Voltage :
70V
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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