IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Power Dissipation Ambient-Max :
- 500 W
- FET Feature :
- --
- Power Dissipation (Max) :
- 500W (Tc)
- Power Dissipation :
- 500W
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 70 V
- Published :
- 2000
- Terminal Form :
- THROUGH-HOLE
- Resistance :
- 6mOhm
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 70V
- Continuous Drain Current (ID) :
- 110A
- Current Rating :
- 110A
- JEDEC-95 Code :
- TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Brand :
- IXYS
- Configuration :
- Single
- Length :
- 19.96 mm
- Channel Mode :
- Enhancement
- Width :
- 5.13 mm
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Series :
- HiPerFET™
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-264-3, TO-264AA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 70V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Voltage - Rated DC :
- 70V
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Power Dissipation-Max (Abs) :
- 500 W
- Product Status :
- Not For New Designs
- Package :
- Tube
- Power Dissipation-Max :
- 500W Tc
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Product Category :
- MOSFET
- Rise Time :
- 60ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Base Product Number :
- IXFK110
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Tradename :
- HyperFET
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 100 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 110 A
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Pin Count :
- 3
- Height :
- 26.16 mm
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 60 ns
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Pulsed Drain Current-Max (IDM) :
- 600A
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.006 Ω
- Datasheets
- IXFK110N07
IXFK110N07 Documents

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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