IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Power Dissipation Ambient-Max :
500 W
FET Feature :
--
Power Dissipation (Max) :
500W (Tc)
Power Dissipation :
500W
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
70 V
Published :
2000
Terminal Form :
THROUGH-HOLE
Resistance :
6mOhm
Number of Pins :
3
Drain to Source Voltage (Vdss) :
70V
Continuous Drain Current (ID) :
110A
Current Rating :
110A
JEDEC-95 Code :
TO-264AA
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Brand :
IXYS
Configuration :
Single
Length :
19.96 mm
Channel Mode :
Enhancement
Width :
5.13 mm
Moisture Sensitivity Level (MSL) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Transistor Type :
1 N-Channel
Series :
HiPerFET™
Number of Terminals :
3
Number of Terminations :
3
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-264-3, TO-264AA
Element Configuration :
Single
Radiation Hardening :
No
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
70V
Avalanche Energy Rating (Eas) :
2000 mJ
Voltage - Rated DC :
70V
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Power Dissipation-Max (Abs) :
500 W
Product Status :
Not For New Designs
Package :
Tube
Power Dissipation-Max :
500W Tc
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Product Category :
MOSFET
Rise Time :
60ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Base Product Number :
IXFK110
Number of Channels :
1 Channel
Factory Lead Time :
8 Weeks
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Mounting Type :
Through Hole
Tradename :
HyperFET
Transistor Application :
SWITCHING
Turn-Off Delay Time :
100 ns
Supplier Device Package :
TO-264AA (IXFK)
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
110 A
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
FET Type :
N-Channel
Pin Count :
3
Height :
26.16 mm
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
60 ns
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 8mA
Pulsed Drain Current-Max (IDM) :
600A
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.006 Ω
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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