IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™
Packaging :
Tube
Pin Count :
3
Resistance :
6mOhm
Voltage - Rated DC :
70V
Power Dissipation-Max (Abs) :
500 W
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Power Dissipation :
500W
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 8mA
Supplier Device Package :
TO-264AA (IXFK)
Tradename :
HyperFET
Power Dissipation Ambient-Max :
500 W
Element Configuration :
Single
Drain to Source Breakdown Voltage :
70V
DS Breakdown Voltage-Min :
70 V
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
110 A
Number of Pins :
3
JEDEC-95 Code :
TO-264AA
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Reach Compliance Code :
Compliant
Product Status :
Not For New Designs
Number of Terminations :
3
Published :
2000
Mount :
Through Hole
Transistor Element Material :
SILICON
Fall Time (Typ) :
60 ns
ECCN Code :
EAR99
Manufacturer :
IXYS
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.006 Ω
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
500W (Tc)
Operating Temperature :
-55°C~150°C TJ
Rise Time :
60ns
Base Product Number :
IXFK110
Width :
5.13 mm
Brand :
IXYS
FET Feature :
--
Terminal Position :
Single
Channel Mode :
Enhancement
Continuous Drain Current (ID) :
110A
Mounting Type :
Through Hole
Number of Terminals :
3
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Transistor Application :
SWITCHING
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Current Rating :
110A
Qualification Status :
Not Qualified
Pbfree Code :
yes
Transistor Type :
1 N-Channel
RoHS :
Details
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
100 ns
Mounting Style :
Through Hole
Case Connection :
DRAIN
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Drain to Source Voltage (Vdss) :
70V
Length :
19.96 mm
Moisture Sensitivity Level (MSL) :
Not Applicable
Avalanche Energy Rating (Eas) :
2000 mJ
Pulsed Drain Current-Max (IDM) :
600A
Package / Case :
TO-264-3, TO-264AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
FET Type :
N-Channel
Package :
Tube
Height :
26.16 mm
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
8 Weeks
Power Dissipation-Max :
500W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXFK110N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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