IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
DS Breakdown Voltage-Min :
70 V
Mount :
Through Hole
Power Dissipation :
500W
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
110 A
Operating Mode :
ENHANCEMENT MODE
Width :
5.13 mm
Published :
2000
Case Connection :
DRAIN
Lead Free :
Lead Free
Power Dissipation (Max) :
500W (Tc)
Transistor Polarity :
N-Channel
Power Dissipation-Max :
500W Tc
FET Type :
N-Channel
Transistor Element Material :
SILICON
Pbfree Code :
yes
Product Category :
MOSFET
Terminal Position :
Single
Radiation Hardening :
No
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Rise Time :
60ns
Series :
HiPerFET™
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Base Product Number :
IXFK110
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Product Status :
Not For New Designs
Voltage - Rated DC :
70V
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Length :
19.96 mm
Drain to Source Voltage (Vdss) :
70V
Factory Lead Time :
8 Weeks
Channel Mode :
Enhancement
Number of Elements :
1
Continuous Drain Current (ID) :
110A
Package / Case :
TO-264-3, TO-264AA
Height :
26.16 mm
JEDEC-95 Code :
TO-264AA
Power Dissipation Ambient-Max :
500 W
Drain-source On Resistance-Max :
0.006 Ω
Power Dissipation-Max (Abs) :
500 W
Moisture Sensitivity Level (MSL) :
Not Applicable
Resistance :
6mOhm
Current Rating :
110A
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
Number of Pins :
3
Turn-Off Delay Time :
100 ns
Pin Count :
3
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Product Type :
MOSFET
Tradename :
HyperFET
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-264AA (IXFK)
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
60 ns
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
600A
Vgs(th) (Max) @ Id :
4V @ 8mA
Drain to Source Breakdown Voltage :
70V
Package :
Tube
RoHS :
Details
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Datasheets
IXFK110N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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