IXFK110N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-264AA (IXFK)

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.006 Ω

Tradename :

HyperFET

Power Dissipation Ambient-Max :

500 W

Number of Pins :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 8mA

Height :

26.16 mm

Product Status :

Not For New Designs

RoHS :

Details

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Number of Terminals :

3

Surface Mount :

No

Published :

2000

Factory Lead Time :

8 Weeks

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Rise Time :

60ns

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Mounting Type :

Through Hole

Element Configuration :

Single

JEDEC-95 Code :

TO-264AA

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Qualification Status :

Not Qualified

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

FET Feature :

--

Drain Current-Max (Abs) (ID) :

110 A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Length :

19.96 mm

Drain to Source Breakdown Voltage :

70V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

500W (Tc)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

70V

Package / Case :

TO-264-3, TO-264AA

Continuous Drain Current (ID) :

110A

Voltage - Rated DC :

70V

Base Product Number :

IXFK110

Mounting Style :

Through Hole

Brand :

IXYS

Transistor Element Material :

SILICON

Width :

5.13 mm

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

600A

Series :

HiPerFET™

Resistance :

6mOhm

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Pin Count :

3

Fall Time (Typ) :

60 ns

Power Dissipation-Max :

500W Tc

Current Rating :

110A

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

Not Applicable

Channel Mode :

Enhancement

Radiation Hardening :

No

Power Dissipation :

500W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

2000 mJ

Package :

Tube

DS Breakdown Voltage-Min :

70 V

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

6m Ω @ 55A, 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Power Dissipation-Max (Abs) :

500 W