IXFK110N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Factory Lead Time :

8 Weeks

Series :

HiPerFET™

Current Rating :

110A

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

500W (Tc)

Drain to Source Breakdown Voltage :

70V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

110A

Number of Elements :

1

Height :

26.16 mm

Drain to Source Voltage (Vdss) :

70V

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Pin Count :

3

Turn-Off Delay Time :

100 ns

Number of Terminals :

3

Manufacturer :

IXYS

Supplier Device Package :

TO-264AA (IXFK)

Rds On (Max) @ Id, Vgs :

6m Ω @ 55A, 10V

Number of Terminations :

3

Power Dissipation-Max :

500W Tc

Transistor Element Material :

SILICON

Rise Time :

60ns

Radiation Hardening :

No

Channel Mode :

Enhancement

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-264-3, TO-264AA

Resistance :

6mOhm

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

Number of Channels :

1 Channel

Configuration :

Single

Product Type :

MOSFET

Mounting Style :

Through Hole

Mount :

Through Hole

Packaging :

Tube

Avalanche Energy Rating (Eas) :

2000 mJ

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.006 Ω

FET Feature :

--

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-264AA

Power Dissipation-Max (Abs) :

500 W

Pbfree Code :

yes

Length :

19.96 mm

Drain Current-Max (Abs) (ID) :

110 A

Base Product Number :

IXFK110

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Width :

5.13 mm

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Element Configuration :

Single

Product Status :

Not For New Designs

Voltage - Rated DC :

70V

Surface Mount :

No

Number of Pins :

3

Published :

2000

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

70 V

Fall Time (Typ) :

60 ns

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation Ambient-Max :

500 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Terminal Position :

Single

Tradename :

HyperFET

Package :

Tube

Pulsed Drain Current-Max (IDM) :

600A

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation :

500W

Gate to Source Voltage (Vgs) :

20V