IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 500 W
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Length :
- 19.96 mm
- Tradename :
- HyperFET
- Configuration :
- Single
- Series :
- HiPerFET™
- Drain to Source Voltage (Vdss) :
- 70V
- Width :
- 5.13 mm
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.006 Ω
- Terminal Position :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 110A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power Dissipation (Max) :
- 500W (Tc)
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 600A
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-264AA
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 110 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Current Rating :
- 110A
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Height :
- 26.16 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Resistance :
- 6mOhm
- Packaging :
- Tube
- Radiation Hardening :
- No
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 70 V
- Power Dissipation Ambient-Max :
- 500 W
- FET Feature :
- --
- Element Configuration :
- Single
- Published :
- 2000
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Rise Time :
- 60ns
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Supplier Device Package :
- TO-264AA (IXFK)
- Fall Time (Typ) :
- 60 ns
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 500W
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 70V
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 70V
- Base Product Number :
- IXFK110
- Product Status :
- Not For New Designs
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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