IXFK110N07

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Mfr.Part #
IXFK110N07
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 70V 110A TO264AA
Stock
15,097
In Stock :
15,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Rds On (Max) @ Id, Vgs :
6m Ω @ 55A, 10V
Length :
19.96 mm
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Radiation Hardening :
No
Reach Compliance Code :
Compliant
Current Rating :
110A
Packaging :
Tube
Power Dissipation-Max :
500W Tc
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
70V
Drain Current-Max (Abs) (ID) :
110 A
Continuous Drain Current (ID) :
110A
Base Product Number :
IXFK110
Vgs (Max) :
±20V
Number of Pins :
3
JEDEC-95 Code :
TO-264AA
Pin Count :
3
Number of Terminals :
3
Configuration :
Single
Published :
2000
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Width :
5.13 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Channel Mode :
Enhancement
Rise Time :
60ns
Turn-Off Delay Time :
100 ns
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Through Hole
Voltage - Rated DC :
70V
Power Dissipation :
500W
Pulsed Drain Current-Max (IDM) :
600A
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
70V
Moisture Sensitivity Level (MSL) :
Not Applicable
Element Configuration :
Single
Power Dissipation (Max) :
500W (Tc)
Avalanche Energy Rating (Eas) :
2000 mJ
Product Status :
Not For New Designs
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
500 W
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 8mA
Transistor Element Material :
SILICON
Fall Time (Typ) :
60 ns
FET Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
DS Breakdown Voltage-Min :
70 V
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Factory Lead Time :
8 Weeks
ECCN Code :
EAR99
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.006 Ω
Tradename :
HyperFET
FET Feature :
--
Supplier Device Package :
TO-264AA (IXFK)
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Power Dissipation Ambient-Max :
500 W
Series :
HiPerFET™
Resistance :
6mOhm
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Package :
Tube
Terminal Form :
THROUGH-HOLE
Height :
26.16 mm
Surface Mount :
No
Datasheets
IXFK110N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXFK110N07 pinout, IXFK110N07 datasheet PDF, IXFK110N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK110N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK110N07


N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA

IXFK110N07 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK110N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFK110N07 Applications


There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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