IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 500W
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation-Max :
- 500W Tc
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Voltage - Rated DC :
- 70V
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 110 A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Case Connection :
- DRAIN
- Package / Case :
- TO-264-3, TO-264AA
- Height :
- 26.16 mm
- Power Dissipation (Max) :
- 500W (Tc)
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Continuous Drain Current (ID) :
- 110A
- Pulsed Drain Current-Max (IDM) :
- 600A
- Width :
- 5.13 mm
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Not For New Designs
- Mount :
- Through Hole
- Packaging :
- Tube
- Package :
- Tube
- Power Dissipation Ambient-Max :
- 500 W
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- THROUGH-HOLE
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 70V
- Base Product Number :
- IXFK110
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 70 V
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Surface Mount :
- No
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 60 ns
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Length :
- 19.96 mm
- Pin Count :
- 3
- Number of Elements :
- 1
- Current Rating :
- 110A
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.006 Ω
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Rise Time :
- 60ns
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Tradename :
- HyperFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- JEDEC-95 Code :
- TO-264AA
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 500 W
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 70V
- Brand :
- IXYS
- RoHS :
- Details
- Published :
- 2000
- Resistance :
- 6mOhm
- Turn-Off Delay Time :
- 100 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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