IXFK110N07
- Mfr.Part #
- IXFK110N07
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 110A TO264AA
- Stock
- 15,097
- In Stock :
- 15,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 70 V
- Mount :
- Through Hole
- Power Dissipation :
- 500W
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 110 A
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 5.13 mm
- Published :
- 2000
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 500W (Tc)
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Rise Time :
- 60ns
- Series :
- HiPerFET™
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFK110
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Product Status :
- Not For New Designs
- Voltage - Rated DC :
- 70V
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Length :
- 19.96 mm
- Drain to Source Voltage (Vdss) :
- 70V
- Factory Lead Time :
- 8 Weeks
- Channel Mode :
- Enhancement
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 110A
- Package / Case :
- TO-264-3, TO-264AA
- Height :
- 26.16 mm
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation Ambient-Max :
- 500 W
- Drain-source On Resistance-Max :
- 0.006 Ω
- Power Dissipation-Max (Abs) :
- 500 W
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Resistance :
- 6mOhm
- Current Rating :
- 110A
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 100 ns
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Tradename :
- HyperFET
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 55A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-264AA (IXFK)
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 60 ns
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 600A
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Drain to Source Breakdown Voltage :
- 70V
- Package :
- Tube
- RoHS :
- Details
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Datasheets
- IXFK110N07

N-Channel Tube 6m Ω @ 55A, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V TO-264-3, TO-264AA
IXFK110N07 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 70V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 70 V.This transistor requires a 70V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK110N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFK110N07 Applications
There are a lot of IXYS
IXFK110N07 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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