IXFK120N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Minimum Operating Temperature :

- 55 C

Package :

Tube

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-55 °C

Maximum Operating Temperature :

+ 175 C

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Length :

19.96 mm

Reach Compliance Code :

Compliant

Rise Time :

33ns

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.024Ohm

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

700 W

Height :

26.16 mm

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Continuous Drain Current (ID) :

120A

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

Package / Case :

TO-264-3, TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-264AA

Base Product Number :

IXFK120

Packaging :

Tube

Rds On Max :

24 mΩ

Drain to Source Breakdown Voltage :

250V

Mount :

Through Hole

Fall Time (Typ) :

33 ns

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

2500 mJ

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Published :

2006

FET Type :

N-Channel

FET Feature :

-

Power Dissipation (Max) :

700W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Drain to Source Resistance :

24 mΩ

Power Dissipation :

700W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

250 V

Drain Current-Max (Abs) (ID) :

120 A

Manufacturer :

IXYS

Width :

5.13 mm

Vgs(th) (Max) @ Id :

5V @ 4mA

Product Category :

MOSFET

Product Type :

MOSFET

Series :

PolarHT™ HiPerFET™

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

700W Tc

Pulsed Drain Current-Max (IDM) :

300A

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Factory Lead Time :

30 Weeks

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Tradename :

HiPerFET

Power Dissipation-Max (Abs) :

700 W

Mounting Type :

Through Hole

Brand :

IXYS

Drain to Source Voltage (Vdss) :

250V

Supplier Device Package :

TO-264AA (IXFK)

ECCN Code :

EAR99

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

JESD-609 Code :

e1

Turn-Off Delay Time :

130 ns

Input Capacitance :

8 nF

Max Operating Temperature :

175 °C

Number of Terminations :

3