IXFK120N25

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Mfr.Part #
IXFK120N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
27,245
In Stock :
27,245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
PolarHT™ HiPerFET™
Tradename :
HiPerFET
Max Operating Temperature :
175 °C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Element Material :
SILICON
FET Feature :
-
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
250V
Rise Time :
33ns
Length :
19.96 mm
Transistor Application :
SWITCHING
Product Type :
MOSFET
FET Type :
N-Channel
Rds On Max :
24 mΩ
Power Dissipation :
700W
Power Dissipation (Max) :
700W (Tc)
RoHS :
Details
Min Operating Temperature :
-55 °C
Package :
Tube
Manufacturer :
IXYS
Drain Current-Max (Abs) (ID) :
120 A
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Fall Time (Typ) :
33 ns
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
TO-264AA
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
120A
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2006
Product Status :
Active
Transistor Type :
1 N-Channel
Power Dissipation-Max (Abs) :
700 W
Input Capacitance :
8 nF
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 175 C
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
2500 mJ
Turn-Off Delay Time :
130 ns
Supplier Device Package :
TO-264AA (IXFK)
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Height :
26.16 mm
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
700W Tc
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Number of Terminations :
3
Number of Terminals :
3
DS Breakdown Voltage-Min :
250 V
Drain to Source Resistance :
24 mΩ
Base Product Number :
IXFK120
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
300A
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Width :
5.13 mm
Drain to Source Voltage (Vdss) :
250V
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Channel Mode :
Enhancement
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.024Ohm
Mounting Type :
Through Hole
Max Power Dissipation :
700 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements :
1
Mount :
Through Hole
Brand :
IXYS
Element Configuration :
Single
Datasheets
IXFK120N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXFK120N25 pinout, IXFK120N25 datasheet PDF, IXFK120N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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