IXFK120N25
- Mfr.Part #
- IXFK120N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 120A TO264AA
- Stock
- 27,245
- In Stock :
- 27,245
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 250 V
- Tradename :
- HiPerFET
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Min Operating Temperature :
- -55 °C
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Surface Mount :
- No
- Input Capacitance :
- 8 nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Power Dissipation-Max :
- 700W Tc
- Length :
- 19.96 mm
- FET Feature :
- -
- Maximum Operating Temperature :
- + 175 C
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 300A
- Max Operating Temperature :
- 175 °C
- Rds On Max :
- 24 mΩ
- Series :
- PolarHT™ HiPerFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 33 ns
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 120 A
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-264-3, TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Radiation Hardening :
- No
- Max Power Dissipation :
- 700 W
- Power Dissipation :
- 700W
- Height :
- 26.16 mm
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- ECCN Code :
- EAR99
- Published :
- 2006
- Product Status :
- Active
- Pin Count :
- 3
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Drain to Source Resistance :
- 24 mΩ
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Package :
- Tube
- Turn-Off Delay Time :
- 130 ns
- JEDEC-95 Code :
- TO-264AA
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 60A, 10V
- Width :
- 5.13 mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 700 W
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 700W (Tc)
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 120A
- Rise Time :
- 33ns
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.024Ohm
- Drain to Source Voltage (Vdss) :
- 250V
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 250V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFK120
- Vgs (Max) :
- ±20V
- Datasheets
- IXFK120N25

N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA
IXFK120N25P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK120N25P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)
IXFK120N25P Applications
There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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