IXFK120N25

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Mfr.Part #
IXFK120N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 120A TO264AA
Stock
27,245
In Stock :
27,245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Length :
19.96 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
250V
JEDEC-95 Code :
TO-264AA
Drain to Source Resistance :
24 mΩ
Channel Mode :
Enhancement
Product Status :
Active
Package Shape :
RECTANGULAR
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Pin Count :
3
Number of Terminations :
3
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
250 V
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
24m Ω @ 60A, 10V
Power Dissipation (Max) :
700W (Tc)
Power Dissipation-Max (Abs) :
700 W
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
JESD-30 Code :
R-PSFM-T3
Rds On Max :
24 mΩ
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
-
Manufacturer :
IXYS
Tradename :
HiPerFET
ECCN Code :
EAR99
Published :
2006
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
120A
Mounting Style :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Package :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
130 ns
Configuration :
Single
Series :
PolarHT™ HiPerFET™
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
2500 mJ
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Max Power Dissipation :
700 W
Height :
26.16 mm
Power Dissipation-Max :
700W Tc
Number of Channels :
1 Channel
Number of Elements :
1
Width :
5.13 mm
FET Type :
N-Channel
Fall Time (Typ) :
33 ns
Supplier Device Package :
TO-264AA (IXFK)
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
250V
Drain Current-Max (Abs) (ID) :
120 A
Number of Terminals :
3
Max Operating Temperature :
175 °C
Case Connection :
DRAIN
RoHS :
Details
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Radiation Hardening :
No
Reach Compliance Code :
Compliant
Base Product Number :
IXFK120
Rise Time :
33ns
Power Dissipation :
700W
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Input Capacitance :
8 nF
Drain-source On Resistance-Max :
0.024Ohm
Maximum Operating Temperature :
+ 175 C
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
300A
Datasheets
IXFK120N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, IXFK120N25 pinout, IXFK120N25 datasheet PDF, IXFK120N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK120N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK120N25


N-Channel Tube 24m Ω @ 60A, 10V ±20V 8000pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXFK120N25P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 24 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK120N25P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 24 mΩ
a 250V drain to source voltage (Vdss)


IXFK120N25P Applications


There are a lot of IXYS
IXFK120N25P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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