IXFK120N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

250 V

Avalanche Energy Rating (Eas) :

2500 mJ

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Supplier Device Package :

TO-264AA (IXFK)

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Rise Time :

33ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

24 mΩ

Mount :

Through Hole

Power Dissipation :

700W

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

250V

Power Dissipation-Max :

700W Tc

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Surface Mount :

No

Vgs (Max) :

±20V

Package / Case :

TO-264-3, TO-264AA

Configuration :

Single

Number of Terminals :

3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Product Status :

Active

Packaging :

Tube

Pbfree Code :

yes

RoHS :

Details

Input Capacitance :

8 nF

Mounting Type :

Through Hole

Max Power Dissipation :

700 W

Max Operating Temperature :

175 °C

Transistor Application :

SWITCHING

Length :

19.96 mm

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

FET Type :

N-Channel

Qualification Status :

Not Qualified

Case Connection :

DRAIN

JEDEC-95 Code :

TO-264AA

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.024Ohm

Element Configuration :

Single

Pin Count :

3

Number of Channels :

1 Channel

Published :

2006

Power Dissipation-Max (Abs) :

700 W

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

30 Weeks

ECCN Code :

EAR99

Product Category :

MOSFET

Number of Elements :

1

Series :

PolarHT™ HiPerFET™

Vgs(th) (Max) @ Id :

5V @ 4mA

Drain Current-Max (Abs) (ID) :

120 A

Base Product Number :

IXFK120

Operating Temperature :

-55°C~175°C TJ

Height :

26.16 mm

Maximum Operating Temperature :

+ 175 C

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Width :

5.13 mm

Drain to Source Voltage (Vdss) :

250V

Fall Time (Typ) :

33 ns

Min Operating Temperature :

-55 °C

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

300A

Number of Terminations :

3

Power Dissipation (Max) :

700W (Tc)

FET Feature :

-

Rds On Max :

24 mΩ

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

Turn-Off Delay Time :

130 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Product Type :

MOSFET