IRFBA90N20DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

960 mJ

Additional Feature :

AVALANCHE RATED

Width :

5mm

Threshold Voltage :

5V

Transistor Element Material :

SILICON

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Height :

15.0114mm

Radiation Hardening :

No

Resistance :

23Ohm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

5 V

Rise Time :

160ns

FET Type :

N-Channel

Vgs (Max) :

±30V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Turn-Off Delay Time :

39 ns

Length :

10.9982mm

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Continuous Drain Current (ID) :

98A

Number of Pins :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain Current-Max (Abs) (ID) :

95A

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

23m Ω @ 59A, 10V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6080pF @ 25V

Package / Case :

TO-273AA

Dual Supply Voltage :

200V

Current Rating :

98A

Power Dissipation-Max :

650W Tc

Factory Lead Time :

25 Weeks

Packaging :

Tube

Fall Time (Typ) :

77 ns

Power Dissipation :

650W

Case Connection :

DRAIN

Mounting Type :

Through Hole

Number of Elements :

1

Turn On Delay Time :

23 ns

Mount :

Through Hole

Voltage - Rated DC :

200V