IRFB16N50KPBF
- Mfr.Part #
- IRFB16N50KPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 17A TO220AB
- Stock
- 5,759
- In Stock :
- 5,759
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 20 ns
- Rds On Max :
- 350 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Width :
- 4.7mm
- Voltage - Rated DC :
- 500V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Weight :
- 6.000006g
- Rise Time :
- 77ns
- Current Rating :
- 17A
- Min Operating Temperature :
- -55°C
- Height :
- 9.01mm
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 38 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 350mOhm
- Length :
- 10.41mm
- Continuous Drain Current (ID) :
- 17A
- Number of Pins :
- 3
- Fall Time (Typ) :
- 30 ns
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 280W
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 350mOhm @ 10A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance :
- 2.21nF
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 500V
- Published :
- 2004
- Power Dissipation-Max :
- 280W Tc
- Number of Channels :
- 1
- Datasheets
- IRFB16N50KPBF
IRFB16N50KPBF Documents
N-Channel Tube 350mOhm @ 10A, 10V ±30V 2210pF @ 25V 89nC @ 10V 500V TO-220-3
IRFB16N50KPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2210pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 350mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB16N50KPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 350mOhm
a 500V drain to source voltage (Vdss)
IRFB16N50KPBF Applications
There are a lot of Vishay Siliconix
IRFB16N50KPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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