IRFB16N50KPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Continuous Drain Current (ID) :

17A

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±30V

Rds On Max :

350 mΩ

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Input Capacitance :

2.21nF

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

30 ns

Voltage - Rated DC :

500V

Number of Channels :

1

Lead Free :

Lead Free

Width :

4.7mm

Rise Time :

77ns

Length :

10.41mm

FET Type :

N-Channel

Power Dissipation-Max :

280W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Drain to Source Resistance :

350mOhm

Height :

9.01mm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Max Operating Temperature :

150°C

Power Dissipation :

280W

Package / Case :

TO-220-3

Mount :

Through Hole

Current Rating :

17A

Supplier Device Package :

TO-220AB

Published :

2004

Rds On (Max) @ Id, Vgs :

350mOhm @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

38 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Element Configuration :

Single

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V