IRFB11N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Power Dissipation-Max :

170W Tc

Fall Time (Typ) :

28 ns

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

170W

Rds On Max :

520 mΩ

Number of Channels :

1

Turn On Delay Time :

14 ns

Weight :

6.000006g

Supplier Device Package :

TO-220AB

Published :

2009

Packaging :

Tube

Nominal Vgs :

4 V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Min Operating Temperature :

-55°C

Current Rating :

11A

Factory Lead Time :

11 Weeks

Continuous Drain Current (ID) :

11A

Height :

9.01mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Radiation Hardening :

No

Input Capacitance :

1.423nF

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Threshold Voltage :

4V

Max Operating Temperature :

150°C

Turn-Off Delay Time :

32 ns

Length :

10.41mm

FET Type :

N-Channel

Resistance :

520mOhm

Element Configuration :

Single

Width :

4.7mm

Gate to Source Voltage (Vgs) :

30V

Rise Time :

35ns

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Drain to Source Resistance :

520mOhm

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

500V

Package / Case :

TO-220-3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Elements :

1