IRFB11N50APBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

170W (Tc)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1423 pF @ 25 V

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Manufacturer :

Vishay

Configuration :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Tube

Product Status :

Active

FET Feature :

-

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Series :

-

Product Type :

MOSFET

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Subcategory :

MOSFETs

Brand :

Vishay / Siliconix

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

500 V

Base Product Number :

IRFB11

Rise Time :

35 ns

Product Category :

MOSFET

Packaging :

Tube

Supplier Device Package :

TO-220AB