IRFB11N50A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Published :

2009

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.41mm

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Power Dissipation :

170W

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

500V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Vgs (Max) :

±30V

Turn On Delay Time :

14 ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

520mOhm

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

170W Tc

Turn-Off Delay Time :

32 ns

Weight :

6.000006g

Supplier Device Package :

TO-220AB

Width :

4.7mm

RoHS Status :

Non-RoHS Compliant

Min Operating Temperature :

-55°C

Height :

9.01mm

Rise Time :

35ns

Input Capacitance :

1.423nF

Mounting Type :

Through Hole

Element Configuration :

Single

Packaging :

Tube

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On Max :

520 mΩ