IRFB18N50KPBF
- Mfr.Part #
- IRFB18N50KPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 17A TO220AB
- Stock
- 1,566
- In Stock :
- 1,566
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Current Rating :
- 18A
- Power Dissipation-Max :
- 220W Tc
- Weight :
- 6.000006g
- Continuous Drain Current (ID) :
- 17A
- Dual Supply Voltage :
- 500V
- Fall Time (Typ) :
- 30 ns
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 45 ns
- Turn On Delay Time :
- 22 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Published :
- 2014
- Drain to Source Resistance :
- 290mOhm
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Termination :
- Through Hole
- Resistance :
- 290mOhm
- Height :
- 9.01mm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 2.83nF
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Voltage - Rated DC :
- 500V
- Vgs (Max) :
- ±30V
- Rds On Max :
- 290 mΩ
- Drain to Source Breakdown Voltage :
- 500V
- Nominal Vgs :
- 5 V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Length :
- 10.41mm
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Width :
- 4.7mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 200W
- Threshold Voltage :
- 5V
- Rds On (Max) @ Id, Vgs :
- 290mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2830pF @ 25V
- Rise Time :
- 60ns
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Factory Lead Time :
- 18 Weeks
- REACH SVHC :
- Unknown
- Datasheets
- IRFB18N50KPBF
N-Channel Tube 290mOhm @ 10A, 10V ±30V 2830pF @ 25V 120nC @ 10V 500V TO-220-3
IRFB18N50KPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2830pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 290mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB18N50KPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 290mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFB18N50KPBF Applications
There are a lot of Vishay Siliconix
IRFB18N50KPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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