IRFB18N50KPBF

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Mfr.Part #
IRFB18N50KPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 17A TO220AB
Stock
1,566
In Stock :
1,566

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Current Rating :
18A
Power Dissipation-Max :
220W Tc
Weight :
6.000006g
Continuous Drain Current (ID) :
17A
Dual Supply Voltage :
500V
Fall Time (Typ) :
30 ns
Mounting Type :
Through Hole
Turn-Off Delay Time :
45 ns
Turn On Delay Time :
22 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Published :
2014
Drain to Source Resistance :
290mOhm
FET Type :
N-Channel
Number of Pins :
3
Max Operating Temperature :
150°C
Vgs(th) (Max) @ Id :
5V @ 250μA
Termination :
Through Hole
Resistance :
290mOhm
Height :
9.01mm
RoHS Status :
ROHS3 Compliant
Input Capacitance :
2.83nF
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Voltage - Rated DC :
500V
Vgs (Max) :
±30V
Rds On Max :
290 mΩ
Drain to Source Breakdown Voltage :
500V
Nominal Vgs :
5 V
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Length :
10.41mm
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Width :
4.7mm
Lead Free :
Lead Free
Power Dissipation :
200W
Threshold Voltage :
5V
Rds On (Max) @ Id, Vgs :
290mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2830pF @ 25V
Rise Time :
60ns
Radiation Hardening :
No
Min Operating Temperature :
-55°C
Supplier Device Package :
TO-220AB
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Factory Lead Time :
18 Weeks
REACH SVHC :
Unknown
Datasheets
IRFB18N50KPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB18N50KPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, IRFB18N50KPBF pinout, IRFB18N50KPBF datasheet PDF, IRFB18N50KPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB18N50KPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB18N50KPBF


N-Channel Tube 290mOhm @ 10A, 10V ±30V 2830pF @ 25V 120nC @ 10V 500V TO-220-3

IRFB18N50KPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2830pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 290mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB18N50KPBF Features


a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 290mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFB18N50KPBF Applications


There are a lot of Vishay Siliconix
IRFB18N50KPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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