IRFB17N50L

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Mfr.Part #
IRFB17N50L
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
69,158
In Stock :
69,158

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Supplier Device Package :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Element Configuration :
Single
Voltage - Rated DC :
500V
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Fall Time (Typ) :
28 ns
Lead Free :
Contains Lead
Rds On Max :
320 mΩ
Mount :
Through Hole
Turn-Off Delay Time :
50 ns
Vgs (Max) :
±30V
Width :
4.7mm
Number of Elements :
1
Length :
10.41mm
Drain to Source Resistance :
320mOhm
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Turn On Delay Time :
21 ns
Power Dissipation :
220W
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
2760pF @ 25V
FET Type :
N-Channel
Published :
2011
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Gate to Source Voltage (Vgs) :
30V
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55°C
Power Dissipation-Max :
220W Tc
Max Operating Temperature :
150°C
Height :
9.01mm
Rds On (Max) @ Id, Vgs :
320mOhm @ 9.9A, 10V
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
6.000006g
Current Rating :
16A
Rise Time :
51ns
Continuous Drain Current (ID) :
16A
Input Capacitance :
2.76nF
Vgs(th) (Max) @ Id :
5V @ 250μA
Datasheets
IRFB17N50L
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB17N50L from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRFB17N50L pinout, IRFB17N50L datasheet PDF, IRFB17N50L amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB17N50L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB17N50L


N-Channel Tube 320mOhm @ 9.9A, 10V ±30V 2760pF @ 25V 130nC @ 10V 500V TO-220-3

IRFB17N50L Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2760pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 320mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 21 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFB17N50L Features


a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
single MOSFETs transistor is 320mOhm
a 500V drain to source voltage (Vdss)


IRFB17N50L Applications


There are a lot of Vishay Siliconix
IRFB17N50L applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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