IRFB17N50L
- Mfr.Part #
- IRFB17N50L
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 69,158
- In Stock :
- 69,158
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Supplier Device Package :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Element Configuration :
- Single
- Voltage - Rated DC :
- 500V
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Fall Time (Typ) :
- 28 ns
- Lead Free :
- Contains Lead
- Rds On Max :
- 320 mΩ
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Vgs (Max) :
- ±30V
- Width :
- 4.7mm
- Number of Elements :
- 1
- Length :
- 10.41mm
- Drain to Source Resistance :
- 320mOhm
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Turn On Delay Time :
- 21 ns
- Power Dissipation :
- 220W
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2760pF @ 25V
- FET Type :
- N-Channel
- Published :
- 2011
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 220W Tc
- Max Operating Temperature :
- 150°C
- Height :
- 9.01mm
- Rds On (Max) @ Id, Vgs :
- 320mOhm @ 9.9A, 10V
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.000006g
- Current Rating :
- 16A
- Rise Time :
- 51ns
- Continuous Drain Current (ID) :
- 16A
- Input Capacitance :
- 2.76nF
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- IRFB17N50L
N-Channel Tube 320mOhm @ 9.9A, 10V ±30V 2760pF @ 25V 130nC @ 10V 500V TO-220-3
IRFB17N50L Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2760pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 320mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 21 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFB17N50L Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
single MOSFETs transistor is 320mOhm
a 500V drain to source voltage (Vdss)
IRFB17N50L Applications
There are a lot of Vishay Siliconix
IRFB17N50L applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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