IRFB17N50LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

280mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

28 ns

Nominal Vgs :

5 V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Threshold Voltage :

5V

Package / Case :

TO-220-3

Number of Elements :

1

FET Type :

N-Channel

Height :

9.01mm

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2760pF @ 25V

Drain to Source Resistance :

320mOhm

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

16A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Factory Lead Time :

8 Weeks

Vgs (Max) :

±30V

Power Dissipation-Max :

220W Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

320mOhm @ 9.9A, 10V

Rise Time :

51ns

Input Capacitance :

2.76nF

Element Configuration :

Single

Number of Channels :

1

Rds On Max :

320 mΩ

Max Operating Temperature :

150°C

Published :

2014

Weight :

6.000006g

Radiation Hardening :

No

Lead Free :

Lead Free

Length :

10.41mm

Turn On Delay Time :

21 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

4.7mm

Recovery Time :

250 ns

Power Dissipation :

220W

Current - Continuous Drain (Id) @ 25°C :

16A Tc

REACH SVHC :

Unknown

Mount :

Through Hole

Turn-Off Delay Time :

50 ns

Number of Pins :

3