IRFB13N50A

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Mfr.Part #
IRFB13N50A
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 14A TO220AB
Stock
7,522
In Stock :
7,522

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Width :
4.7mm
Package / Case :
TO-220-3
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Input Capacitance :
1.91nF
Turn-Off Delay Time :
39 ns
Drain to Source Resistance :
450mOhm
Rds On (Max) @ Id, Vgs :
450mOhm @ 8.4A, 10V
Min Operating Temperature :
-55°C
Turn On Delay Time :
15 ns
Weight :
6.000006g
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
9.01mm
Current - Continuous Drain (Id) @ 25°C :
14A Tc
FET Type :
N-Channel
Mount :
Through Hole
Power Dissipation-Max :
250W Tc
Rise Time :
39ns
RoHS Status :
Non-RoHS Compliant
Fall Time (Typ) :
31 ns
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1910pF @ 25V
Radiation Hardening :
No
Rds On Max :
450 mΩ
Packaging :
Tube
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
500V
Number of Channels :
1
Max Operating Temperature :
150°C
Supplier Device Package :
TO-220AB
Length :
10.41mm
Drain to Source Breakdown Voltage :
500V
Element Configuration :
Single
Continuous Drain Current (ID) :
14A
Published :
2016
Datasheets
IRFB13N50A
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB13N50A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, IRFB13N50A pinout, IRFB13N50A datasheet PDF, IRFB13N50A amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB13N50A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB13N50A


N-Channel Tube 450mOhm @ 8.4A, 10V ±30V 1910pF @ 25V 81nC @ 10V 500V TO-220-3

IRFB13N50A Overview


A device's maximal input capacitance is 1910pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 450mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFB13N50A Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 450mOhm
a 500V drain to source voltage (Vdss)


IRFB13N50A Applications


There are a lot of Vishay Siliconix
IRFB13N50A applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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