IRFB13N50A
- Mfr.Part #
- IRFB13N50A
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 14A TO220AB
- Stock
- 7,522
- In Stock :
- 7,522
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.7mm
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Input Capacitance :
- 1.91nF
- Turn-Off Delay Time :
- 39 ns
- Drain to Source Resistance :
- 450mOhm
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 8.4A, 10V
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 15 ns
- Weight :
- 6.000006g
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 9.01mm
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Power Dissipation-Max :
- 250W Tc
- Rise Time :
- 39ns
- RoHS Status :
- Non-RoHS Compliant
- Fall Time (Typ) :
- 31 ns
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1910pF @ 25V
- Radiation Hardening :
- No
- Rds On Max :
- 450 mΩ
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Channels :
- 1
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- TO-220AB
- Length :
- 10.41mm
- Drain to Source Breakdown Voltage :
- 500V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 14A
- Published :
- 2016
- Datasheets
- IRFB13N50A
N-Channel Tube 450mOhm @ 8.4A, 10V ±30V 1910pF @ 25V 81nC @ 10V 500V TO-220-3
IRFB13N50A Overview
A device's maximal input capacitance is 1910pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 450mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFB13N50A Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 450mOhm
a 500V drain to source voltage (Vdss)
IRFB13N50A Applications
There are a lot of Vishay Siliconix
IRFB13N50A applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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